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Second breakdown of double epitaxial transistors

By: Ernick, F.G.; Kannam, P.J.; Marino, J.;

1968 / IEEE


This item was taken from the IEEE Periodical ' Second breakdown of double epitaxial transistors ' This paper deals with the second breakdown of transistors with epitaxial collector, epitaxial base, and diffused emitter. Transistors were fabricated with base width WBin the range of 2 to 18 � and resistivity in the range of 0.1 to 10 ohm . cm. The optimum values of the resistivity and the thickness of these regions were calculated by computer techniques. The devices were mounted onto a TO-63 header and the base and the emitter leads were bonded onto the device ultrasonically. The electrical characteristics, including the frequency response ftand secondary breakdownS/Bcapability, were tested. For the measurement of second breakdown current IM, forward bias condition was used. It was found that for fixed collector and emitter parameters, IMwas controlled by the product of base resistivity �Band base width WB. The value of IMwas found to increase with\rho_{B}W_{B}. However, for a specified device characteristic, an optimum value of\rho_{B}W_{B}was found to exist. For transistors withV_{CEO} =150volts,f_{t}=20mHz andh_{FE}=20, the optimum value of\rho_{B}W_{B}was found to be 6 �10-4ohm . cm2.