Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
High-power high-speed silicon transistor
By: Walczak, D.A.; Kannam, P.J.; Chu, T.L.;
1967 / IEEE
This item was taken from the IEEE Periodical ' High-power high-speed silicon transistor ' High-power high-speed silicon transistors were fabricated on a single wafer using a double-epitaxial single-diffused technique. An N-collector region was deposited on an N+substrate material. The base region was also formed epitaxially by depositing, in situ, a P+layer on the top of the collector region; and the emitter region was formed by diffusion. The transistors were found to have a collector current (I