Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

High-power high-speed silicon transistor

By: Walczak, D.A.; Kannam, P.J.; Chu, T.L.;

1967 / IEEE

Description

This item was taken from the IEEE Periodical ' High-power high-speed silicon transistor ' High-power high-speed silicon transistors were fabricated on a single wafer using a double-epitaxial single-diffused technique. An N-collector region was deposited on an N+substrate material. The base region was also formed epitaxially by depositing, in situ, a P+layer on the top of the collector region; and the emitter region was formed by diffusion. The transistors were found to have a collector current (Ic) capability of 150 A with a total switching time of 2 �s.