Your Search Results

Use materials by this author in your textbook!

AcademicPub holds over eight million pieces of educational content – such as case studies and journal articles – for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Author: Van Bentum, R.

Results

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
2012 / IEEE / 978-1-4673-0192-3
By: Trentzsch, M.; van Bentum, R.; Schloesser, T.; Slesazeck, S.; Sundquist, J.; Paul, J.; Schroeder, U.; Muller, S.; Yurchuk, E.; Martin, D.; Muller, J.; Mikojajick, T.;
HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
2012 / IEEE / 978-1-4673-1081-9
By: Slesazeck, S.; Muller, S.; Schlosser, T.; Boschke, R.; Martin, D.; Paul, J.; van Bentum, R.; Muller, J.; Yurchuk, E.; Mikolajick, T.; Hoffmann, R.; Schroder, U.; Trentzsch, M.;
Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
2014 / IEEE
By: Martin, D.; Schlosser, T.; Paul, J.; Muller, J.; Yurchuk, E.; Hoffmann, R.; van Bentum, R.; Boschke, R.; Schroeder, U.; Slesazeck, S.; Mueller, S.; Mikolajick, T.;
Advanced transistor structures for high performance microprocessors
2004 / IEEE / 0-7803-8528-4
By: Burbach, G.; Gerhardt, M.; Frohberg, K.; Wei, A.; Feudel, T.; Greenlaw, D.; Horstmann, M.; Kepler, N.; Raab, M.; Krishnan, S.; Buller, J.; Cheek, J.; Schwan, C.; Grasshoff, G.; van Bentum, R.; Luning, S.; Huebler, P.; Klais, J.; Ruelke, H.; Hohage, J.; Schaller, M.; Wieczorek, K.; Stephan, R.; Lenski, M.;
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
2004 / IEEE / 0-7803-8684-1
By: Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; van Bentum, R.; Grasshoff, G.; Schwan, C.; Ehrichs, E.; Goad, S.; Buller, J.; Krishnan, S.; Greenlaw, D.; Raab, M.; Kepler, N.; Yang, H.S.; Malik, R.; Narasimha, S.; Li, Y.; Divakaruni, R.; Agnello, P.; Allen, S.; Antreasyan, A.; Arnold, J.C.; Bandy, K.; Belyansky, M.; Bonnoit, A.; Bronner, G.; Chan, V.; Chen, X.; Chen, Z.; Chidambarrao, D.; Chou, A.; Clark, W.; Crowder, S.W.; Engel, B.; Harifuchi, H.; Huang, S.F.; Jagannathan, R.; Jamin, F.F.; Kohyama, Y.; Kuroda, H.; Lai, C.W.; Lee, H.K.; Lee, W.-H.; Lim, E.H.; Lai, W.; Mallikarjunan, A.; Matsumoto, K.; McKnight, A.; Nayak, J.; Ng, H.Y.; Panda, S.; Rengarajan, R.; Steigerwalt, M.; Subbanna, S.; Subramanian, K.; Sudijono, J.; Sudo, G.; Sun, S.-P.; Tessier, B.; Toyoshima, Y.; Tran, P.; Wise, R.; Wong, R.; Yang, I.Y.; Wann, C.H.; Su, L.T.; Horstmann, M.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Salz, H.;

Return To Top