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Author: Young Jun Suh
Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric2007 / American Institute of Physics
By: Chang Yong Kang; Rino Choi; M. M. Hussain; Jinguo Wang; Young Jun Suh; H. C. Floresca; Moon J. Kim; Jiyoung Kim; Byoung Hun Lee; Raj Jammy;
Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High- $k$ Dielectric SOI FinFETs2008 / IEEE
By: Moon Kim; Jiyoung Kim; Floresca, H.C.; Young Jun Suh; Rino Choi; Byoung Hun Lee; Ji-Woon Yang; Chang Yong Kang; Jungwoo Oh; Jammy, R.; Hsing-Huang Tseng;