Your Search Results

Use materials by this author in your textbook!

AcademicPub holds over eight million pieces of educational content – such as case studies and journal articles – for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Author: Tsai, W.

Results

Design and Implementation of an Omnidirectional Spherical Mobile Platform
2015 / IEEE
By: Tsai, W.; Chiu, C.;
Tutorial on Applying the VM Technology for TFT-LCD Manufacturing
2015 / IEEE
By: Chen, C.; Kao, C.; Cheng, F.; Tsai, W.;
A New Data Transfer Method via Signal-Rich-Art Code Images Captured by Mobile Devices
2015 / IEEE
By: Lee, Y.; Tsai, W.;
Lithium Niobate Polarization Splitter Fabricated Using One-Step Diffusion
2015 / IEEE
By: Huang, C.; Wang, W.; Tsai, W.; Chen, H.; Kang, C.;
A Convenient Vision-Based System for Automatic Detection of Parking Spaces in Indoor Parking Lots Using Wide-Angle Cameras
2014 / IEEE
By: Tsai, W.; Shih, S.;
Functionalized Carbon Nanotube Thin Films as the pH Sensing Membranes of Extended-Gate Field-Effect Transistors on the Flexible Substrates
2014 / IEEE
By: Huang, B.; Tsai, W.; Cheng, H.; Yang, P.; Huang, Y.; Wang, K.;
Dependence-Guided Service Composition for User-Centric SOA
2014 / IEEE
By: Tsai, W.; Elston, J.; Bai, X.; Zhong, P.;
Robust Video Coding Based on Hybrid Hierarchical B Pictures
2014 / IEEE
By: Chiu, P.; Sun, Y.; Tsai, W.;
Diamond MESFET using ultrashallow RTP boron doping
1991 / IEEE
By: Hodul, D.; Delfino, M.; Tsai, W.; Cooper, C.B., III; Reynolds, G.; Ching, L.Y.; Riaziat, M.;
Recurrent multilayer perceptron for nonlinear system identification
1991 / IEEE / 0-7803-0164-1
By: Fernandez, B.; Tsai, W.; Chong, K.; Atiya, A.; Parlos, A.;
Accelerated learning in multilayer networks
1992 / IEEE / 0-7803-0559-0
By: Fernandez, B.; Muthusami, J.; Parlos, A.; Atiya, A.; Tsai, W.;
Effect of electron cyclotron resonance H/sup +/, Ne/sup +/, Ar/sup +/, and Xe/sup +/ plasma precleaning on titanium silicide formation
1994 / IEEE
By: Day, M.E.; Delfino, M.; Tsai, W.; Fair, J.A.;
The SeaWinds scatterometer instrument
1994 / IEEE / 0-7803-1497-2
By: Freilich, M.; Graf, J.; Wu, C.; Winn, C.; Long, D.; Lisman, D.; Tsai, W.; Spencer, M.;
A structured transformation approach for legacy information systems-a cash receipts/reimbursements example
1999 / IEEE / 0-7695-0001-3
By: Jia-Lang Seng; Tsai, W.;
Physical characterisation of high-k gate stacks deposited on HF-last surfaces
2001 / IEEE / 4-89114-021-6
By: Bender, H.; Conard, T.; Tsai, W.; Kluth, J.; Chen, J.; De Gendt, S.; Caymax, M.; Vandervorst, W.; Maes, J.W.; Detavernier, C.; Besling, W.; Brijs, B.; Zhao, C.; Richard, O.; Petry, J.; Nohira, H.;
Electrical characterisation of high-k materials prepared by atomic layer CVD
2001 / IEEE / 4-89114-021-6
By: Carter, R.J.; Cartier, E.; Caymax, M.; De Gendt, S.; Degraevel R; Groeseneken, G.; Young, E.; Kauerauf, T.; Kerber, A.; Kubicek, S.; Lujan, G.; Pantisano, L.; Tsai, W.; Heyns, M.;
Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
2001 / IEEE / 4-89114-021-6
By: Cosnier, V.; Chabli, A.; Caymax, A.; Chen, J.; Conard, T.; Nohira, H.; Richard, O.; Tsai, W.; Vandervorst, W.; Young, E.; Zhao, C.; De Gendt, S.; Heyns, A.; Maes, J.W.H.; Tuominen, M.; Rochat, N.; Olivier, M.; Bender, H.;
Thermal stability and scalability of Zr-aluminate-based high-k gate stacks
2002 / IEEE / 0-7803-7312-X
By: Maes, J.; Chen, P.J.; Besling, W.F.A.; Copel, M.; Heyns, M.; De Gendt, S.; Vandervorst, W.; Caymax, M.; Kubicek, S.; Bajolet, P.; Young, E.; Tsai, W.; Kerber, A.; Xu, Z.; Cosnier, V.; Petry, J.; Zhao, C.; Kauerauf, T.; Carter, R.J.; Cartier, E.;
Comparison of sub 1 nm TiN/HfO/sub 2/ with poly-Si/HfO/sub 2/ gate stacks using scaled chemical oxide interface
2003 / IEEE / 4-89114-033-X
By: Carter, R.J.; Tsai, W.; Onsia, B.; Chen, P.J.; Ragnarsson, L.; Cartier, E.; Heyns, M.; De Gendt, S.; Caymax, M.; Green, M.; Young, E.;
Implementation of high-k gate dielectrics - a status update
2003 / IEEE / 4-89114-037-2
By: De Gendt, S.; Chen, J.; Heyns, M.; Zhao, C.; Young, E.; Witters, T.; Van Elshocht, S.; Rohr, E.; Tsai, W.; Shimamoto, Y.; Schram, T.; Ragnarsson, L.; Puurunen, R.; Pantisano, L.; Niwa, M.; Maes, J.W.; Kubicek, S.; Kerber, A.; Kaushik, V.; Deweerd, W.; Delabie, A.; Conard, T.; Claes, M.; Caymax, M.; Cartier, E.; Carter, R.;
Scaling of high-k dielectrics towards sub-1nm EOT
2003 / IEEE / 0-7803-7765-6
By: Heyns, M.; Beckx, S.; Bender, H.; Blomme, P.; Boullart, W.; Brijs, B.; Carter, R.; Caymax, M.; Claes, M.; Conard, T.; De Gendt, S.; Degraeve, R.; Delabie, A.; Deweerdt, W.; Groeseneken, G.; Henson, K.; Kauerauf, T.; Kubicek, S.; Lucci, L.; Lujan, G.; Mentens, J.; Pantisano, L.; Petry, J.; Richard, O.; Rohr, E.; Schram, T.; Vandervorst, W.; Van Doorne, P.; Van Elshocht, S.; Westlinder, J.; Witters, T.; Zhao, C.; Cartier, E.; Chen, J.; Cosnier, V.; Green, M.; Jang, S.E.; Kaushik, V.; Kerber, A.; Kluth, J.; Lin, S.; Tsai, W.; Young, E.; Manabe, Y.; Shimamoto, Y.; Bajolet, P.; De Witte, H.; Maes, J.W.; Date, L.; Pique, D.; Coenegrachts, B.; Vertommen, J.; Passefort, S.;
Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/
2005 / IEEE
By: Colombo, L.; Wong, G.M.T.; Ching-Huang Lu; Nishi, Y.; Clemens, B.M.; Deal, M.D.; Chambers, J.J.; Visokay, M.R.; Chi On Chui; Majhi, P.; Tsai, W.;
High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
2005 / IEEE / 4-900784-00-1
By: Severi, S.; Ragnarsson, L.A.; Heyns, M.; De Gendt, S.; De Meyer, K.; Brunco, D.P.; Trojmanm L; Tsai, W.; Schram, T.; Delabie, A.; Johnson, K.D.; Groeseneken, G.;
Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
2006 / IEEE
By: Kauerauf, T.; Degraeve, R.; Aoulaiche, M.; Brunco, D.P.; Johnson, K.D.; Trojman, L.; Severi, S.; Ragnarsson, L.-A.; Heyns, M.; Kristin De Meyer; Groeseneken, G.; Houssa, M.; Tsai, W.; De Gendt, S.; Kaushik, V.S.; Delabie, A.;
Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation
2006 / IEEE / 0-7803-9748-7
By: InJo Ok; Kim, H.; Lee, J.C.; Oktyabrsky, S.; Yakimov, M.; Tokranov, V.; Tsai, W.; Koveshnikov, S.; Yu, L.; Thareja, G.; Zhu, F.; Lee, T.; Zhang, M.;
Enhancement and Depletion-mode GaAs N-MOSFETs with stacked HfO2/Y2O3 gate dielectric
2006 / IEEE / 0-7803-9748-7
By: Zhu, F.; Lee, J.C.; Tsai, W.; Oktyabrsky, S.; Yakimov, M.; Tokranov, V.; Kim, H.S.; Ok, I.; Koveshnikov, S.;
Germanium Passivation for High-k Dielectric III-V MOSFETs and Temperature Dependence of Dielectric Leakage Current
2006 / IEEE / 0-7803-9748-7
By: Hyoung-Sub Kim; Ok, I.; Lee, J.C.; Oktyabrsky, S.; Yakimov, M.; Tokranov, V.; Tsai, W.; Koveshnikov, S.; Yu, L.; Thareja, G.; Zhu, F.; Lee, T.; Zhang, M.;
Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer
2006 / IEEE / 1-4244-0438-X
By: Oktyabrsky, S.; Yakimov, M.; Tokranov, V.; Tsai, W.; Koveshnikov, S.; Yu, L.; Lee, J.C.; Zhu, F.; Lee, T.; Zhang, M.; Kim, H.; InJo Ok;
InGaAs and GaAs/InGaAs Channel Enhancement Mode n-MOSFETs With HfO2 Gate Oxide and a-Si Interface Passivation Layer
2007 / IEEE / 978-1-4244-1101-6
By: Lee, J.; Feng Zhu; Bakhru, H.; Kambhampati, R.; Tsai, W.; Tokranov, V.; Koveshnikov, S.; Oktyabrsky, S.; Yakimov, M.;
High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node
2007 / IEEE / 978-1-4244-1507-6
By: Kelly, D.; Choi, R.; Heh, D.; Choi, K.J.; Oh, J.; Harris, H.R.; Kalra, P.; Sun, G.; Majhi, P.; Suthram, S.; Jammy, R.; Tseng, H.H.; Thompson, S.E.; Tsai, W.; Banerjee, S.; Smith, C.; Hussain, M.M.; Cho, B.J.;
Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High
2008 / IEEE
By: Se-Hoon Lee; Jammy, R.; Jungwoo Oh; Sassman, B.; Young, C.; Bowonder, A.; Wei-Yip Loh; Kyu-Jin Choi; Byung-Jin Cho; Hi-Deok Lee; Kirsch, P.; Harris, H.R.; Tsai, W.; Datta, S.; Hsing-Huang Tseng; Banerjee, S.K.; Majhi, P.;
Charge Trapping and Wearout Characteristics of Self-Aligned Enhancement-Mode GaAs n-MOSFET with Si Interface Passivation Layer and HfO2 Gate Oxide
2008 / IEEE / 978-1-4244-1940-1
By: Park, S.; Zhang, M.; Kim, H.S.; Ok, I.; Zhao, H.; Feng Zhu; Yum, J.; Tsai, W.; Oktyabrsky, S.; Lee, J.C.; Yakimov, M.; Tokranov, V.; Koveshnikov, S.;
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
2008 / IEEE / 978-1-4244-2377-4
By: Datta, S.; Majhi, P.; Santos, M.B.; Gaspe, C.K.; Pianetta, P.; Sun, Y.; Lee, J.; Yakimov, M.; Kambhampatic, R.; Tokranov, V.; Oktyabrsky, S.; Ok, I.; Koveshnikov, S.; Heh, D.; Goel, N.; Tsai, W.;
Approaching fermi level unpinning in Oxide-In0.2Ga0.8As
2008 / IEEE / 978-1-4244-2377-4
By: Shiu, K.H.; Lin, D.; Lin, T.D.; Lee, W.C.; Kwo, J.; Hong, M.; Chiang, T.H.; Tsai, W.; Wang, W.E.;
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics
2008 / IEEE / 978-1-4244-1942-5
By: Chen, C.P.; Lin, T.D.; Tsai, W.; Kwo, J.; Hong, M.; Lin, C.A.; Chang, P.; Chiu, H.C.;
High Electron Mobility (2270 cm2/Vsec) In0.53Ga0.47As Inversion Channel N-MOSFETs with ALD ZrO2 Gate Oxide Providing 1 nm EOT
2008 / IEEE / 978-1-4244-1942-5
By: Tokranov, V.; Oktyabrsky, S.; Santos, M.B.; Gaspe, C.K.; Majhi, P.; Goel, N.; Yakimov, M.; Tsai, W.; Lee, J.; Koveshnikov, S.; Zhu, F.; Bakhru, H.; Kambhampati, R.;
Self-Aligned n-channel MOSFET on InP and In0.53Ga0.47As Using Physical Vapor Deposition HfO2 and Silicon Interface Passivation Layer
2008 / IEEE / 978-1-4244-1942-5
By: Zhu, F.; Zhao, H.; Kim, H.; InJo Ok; Lee, J.C.; Santos, M.B.; Gaspe, C.K.; Tsai, W.; Zhang, M.; Goel, N.; Majhi, P.; Garcia, D.; Yum, J.; Park, S.;
Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics
2009 / IEEE / 978-1-4244-2784-0
By: Chang, P.; Lin, T.D.; Chiu, H.C.; Hong, M.; Tsai, W.; Lee, W.C.; Hsu, S.S.H.; Lin, Y.S.; Kwo, J.; Chiang, C.H.;
Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
2009 / IEEE / 978-1-4244-4351-2
By: Chang, P.; Chiu, H.C.; Lin, T.D.; Hong, M.; Chang, Y.H.; Tsai, W.; Kwo, J.; Chang, W.H.; Lin, C.A.;
High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric
2009 / IEEE / 978-1-4244-3527-2
By: Chang, P.; Chiu, H.C.; Hong, M.; Tsai, W.; Lin, T.D.; Huang, M.L.; Chen, S.Z.; Huang, J.C.; Chang, Y.H.; Kwo, J.;
Tri-band filter design using substrate integrated waveguide resonators in LTCC.
2010 / IEEE / 978-1-4244-6058-8
By: Wu, R.; Tsai, W.;

Return To Top