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Author: Tamaru, T.

Results

Reliability improvement in blanket tungsten CVD contact filling process for high aspect ratio contact
1993 / IEEE / 0-7803-0782-8
By: Owada, N.; Tamaru, T.; Aoki, H.; Saito, T.;
A novel 0.20 /spl mu/m full CMOS SRAM cell using stacked cross couple with enhanced soft error immunity
1998 / IEEE / 0-7803-4774-9
By: Kikushima, K.; Tamaru, T.; Ohira, Y.; Iwahashi, S.; Yamaguchi, K.; Nakamura, M.; Ootsuka, F.; Miyake, T.;
1.5 nm equivalent thickness Ta/sub 2/O/sub 5/ high-k dielectric with rugged Si suited for mass production of high density DRAMs
1998 / IEEE / 0-7803-4774-9
By: Tamaru, T.; Nakamura, Y.; Kanai, M.; Kuroda, J.; Nakata, M.; Uemura, T.; Sugawara, Y.; Furukawa, R.; Yamamoto, S.; Kunitomo, M.; Asano, I.; Tadaki, Y.; Sekiguchi, T.; Ohji, Y.; Iijima, S.; Kisu, T.; Morino, M.; Nakamura, M.; Kawamura, H.; Kawakita, K.; Yamada, S.; Kawagoe, T.;
Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs
1999 / IEEE / 4-930813-93-X
By: Tamaru, T.; Asano, I.; Furukawa, R.; Kunitomo, M.; Miki, H.; Goto, H.; Kisu, T.; Kuroda, J.; Yamamoto, H.; Ohji, Y.; Iijima, S.;
Measurements of temperature and OH radical concentration in combustion gases by absorption spectroscopy with a diode laser
1999 / IEEE / 0-7803-5661-6
By: Aizawa, T.; Tamaru, T.; Kamimoto, T.;
Improvement of thermal stability of via resistance in dual damascene copper interconnection
2000 / IEEE / 0-7803-6438-4
By: Ashihara, H.; Aoki, H.; Ohmori, K.; Tamaru, T.; Oshima, T.; Hinode, K.; Saito, T.; Satoh, A.; Miyazaki, H.; Murata, J.; Torii, K.; Miyauchi, M.; Yamaguchi, H.;
A new current-balance model for predicting charging damage during high-temperature plasma processes
2001 / IEEE / 0-9651577-5-X
By: Tamaru, T.; Hirasawa, S.; Mise, N.; Saikawa, T.; Okudaira, S.; Maeno, R.; Usui, T.; Oomori, K.;
A novel copper interconnection technology using self aligned metal capping method
2001 / IEEE / 0-7803-6678-6
By: Omori, S.; Ito, Y.; Kubo, M.; Noguchi, J.; Ohashi, N.; Saito, T.; Yamaguchi, H.; Imai, T.; Tamaru, T.;
A Note on Bolometer Mount Efficiency Measurement Technique by Impedance Method in Japan (Correspondence)
1966 / IEEE
By: Tamaru, T.;
Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization
2003 / IEEE / 0-7803-7649-8
By: Tsuneda, R.; Makabe, K.; Hamada, N.; Yamaguchi, H.; Takeda, K.; Tamaru, T.; Kubo, M.; Miura, N.; Noguchi, J.;
Simple self-aligned air-gap interconnect process with Cu/FSG structure
2003 / IEEE / 0-7803-7797-4
By: Nakamura, T.; Sato, K.; Fujiwara, T.; Noguchi, J.; Tamaru, T.; kubo, M.; Konishi, N.; Yamada, Y.; Saito, T.; Ishikawa, K.; Uno, S.;
Process and reliability of air-gap Cu interconnect using 90-nm node technology
2005 / IEEE
By: Oshima, T.; Fujiwara, T.; Uno, S.; Konishi, N.; Sato, K.; Noguchi, J.; Ishikawa, K.; Aoki, H.; Yamada, Y.; Tamaru, T.; Kubo, M.; Saito, T.; Ashihara, H.;
On frequency conversion in a microwave discharge
1965 / IEEE
By: Tamaru, T.; Chiyoda, K.;
Harmonic generation in a millimeter-wave gas discharge at 55 GHz frequency
1969 / IEEE
By: Chiyoda, K.; Tamaru, T.; Maejima, Y.;
Impact of Cu barrier dielectrics upon stress-induced voiding of dual-damascene copper interconnects
2005 / IEEE / 0-7803-8752-X
By: Iwasaki, T.; Shimazu, H.; Ishikawa, K.; Saito, T.; Oshima, T.; Ando, T.; Aoki, H.; Tamaru, T.; Noguchi, J.;

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