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Author: Sug Hun Hong
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors2006 / American Institute of Physics
By: Jaehoo Park; Tae Joo Park; Moonju Cho; Seong Keun Kim; Sug Hun Hong; Jeong Hwan Kim; Minha Seo; Cheol Seong Hwang; Jeong Yeon Won; Ranju Jeong; Jung-Hae Choi;
Improvement of the current-voltage characteristics of a tunneling dielectric by barrier engineering by adopting an atomic-layer-deposited SiN layer for flash memory applications2005 / IEEE / 0-7803-9203-5
By: Tae Joo Park; Jae Hyuck Jang; Sug Hun Hong; Cheol Seong Hwang; Miyoung Kim; Doo Seok Jeong;