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Author: Subbanna, S.

Results

113-GHz f/sub T/ graded-base SiGe HBT's
1993 / IEEE
By: Megdanis, A.; Stork, J.; Harame, D.; Meyerson, B.; Crabbe, E.; Subbanna, S.; Cotte, J.; Comfort, J.; Patton, G.; Stanis, C.; Gilbert, M.; Chu, J.;
High-performance devices for a 0.15- mu m CMOS technology
1993 / IEEE
By: Subbanna, S.; Acovic, A.; McFarland, P.A.; Fischer, S.; Warnock, J.; Shahidi, G.G.; Ganin, E.; Ning, T.H.; Davari, B.; Sun, J.Y.-C.; Comfort, J.; Crabbe, E.;
A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic
1993 / IEEE / 0-7803-1450-6
By: Subbanna, S.; Harame, D.; Lii, T.; Malinowski, J.; Robertson, D.; Gilbreth, J.; Brodsky, S.; Shahidi, G.; Acovic, A.; Danner, D.; Franch, R.; Davari, B.; Comfort, J.; Chappell, B.;
Optimization of SiGe HBT technology for high speed analog and mixed-signal applications
1993 / IEEE / 0-7803-1450-6
By: Jenkins, K.A.; Cotte, J.; Hsu, K.Y.-J.; Meyerson, B.S.; Stork, J.M.C.; Harame, D.L.; Cressler, J.D.; Scharf, B.W.; Tice, T.E.; Yasaitis, J.A.; Subbanna, S.; Crabbe, E.F.; Restle, P.;
200 mm process integration for a 0.15 /spl mu/m channel-length CMOS technology using mixed X-ray/optical lithography
1994 / IEEE / 0-7803-2111-1
By: Schulz, R.; Greco, S.; Ray, A.; Acovic, A.; Snare, J.; Sun, J.; McFarland, P.; Newman, T.; Ng, H.; McCord, M.; Martin, B.; Agnello, P.; Wu, S.; Comfort, J.; Crabbe, E.; Ganin, E.; Subbanna, S.; Gehres, R.; Lamberti, A.; DellaGuardia, R.; Liebmann, L.; Beyer, E.;
A 200 mm SiGe-HBT technology for wireless and mixed-signal applications
1994 / IEEE / 0-7803-2111-1
By: Harame, D.L.; Crabbe, E.F.; Gilbert, M.; Nguyen-Ngoc, D.; Malinowski, J.; Jeng, S.-J.; Meyerson, B.; Cressler, J.D.; Groves, R.; Berg, G.; Tallman, K.; Stein, K.; Hueckel, G.; Kermarrec, C.; Tice, T.; Fitzgibbons, G.; Walter, K.; Colavito, D.; Houghton, T.; Greco, N.; Kebede, T.; Cunningham, B.; Subbanna, S.; Comfort, J.H.; Schonenberg, K.;
55-mW 300-MHz analog-digital converters using digital VLSI technology
1995 / IEEE / 0-7803-3036-6
By: Sutardja, P.; Sun, J.Y.-C.; Subbanna, S.; Coleman, G.; Thon, L.E.; Altieri, J.; Tang, D.D.;
A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications
1995 / IEEE / 0-7803-2778-0
By: Subbanna, S.; Colavito, D.B.; Stein, K.J.; Tallman, K.A.; Soyuer, M.; Wu, S.; Groves, R.A.; Berg, G.D.; Gilbert, M.M.; Schonenberg, K.T.; Jeng, S.J.; Malinowski, J.C.; Harame, D.L.; Nguyen-Ngoc, D.; Meyerson, B.S.; Sunderland, D.A.;
A high-performance 0.08 /spl mu/m CMOS
1996 / IEEE / 0-7803-3342-X
By: Su, L.; Subbanna, S.; Davari, B.; Sun, J.; Chen, B.; Crowder, S.; Snare, J.; Acovic, A.; Hargrove, M.; Ray, A.; Newman, T.; Ng, H.; Rauch, S.; Schulz, R.; Nowak, E.; Agnello, P.; Crabbe, E.;
Phase edge lithography for sub 0.1 /spl mu/m electrical channel length in a 200 mm full CMOS process
1995 / IEEE / 0-7803-2602-4
By: Subbanna, S.; Crabbe, E.; Newman, T.; Agnello, P.; Ganin, E.; Sunderland, D.; Comfort, J.; Liebmann, L.;
A high-density 6.9 sq. /spl mu/m embedded SRAM cell in a high-performance 0.25 /spl mu/m-generation CMOS logic technology
1996 / IEEE / 0-7803-3393-4
By: Subbanna, S.; Davari, B.; Crabbe, E.; Schulz, R.; Wu, S.; Tallman, K.; Saccamango, M.J.; Greco, S.; McGahay, V.; Allen, A.J.; Chen, B.; Cotler, T.; Eld, E.; Lasky, J.; Ng, H.; Ray, A.; Snare, J.; Su, L.; Sunderland, D.; Sun, J.; Agnello, P.;
Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs
1997 / IEEE / 0-7803-3916-9
By: Malinowski, J.; Nguyen-Ngoc, D.; Freeman, G.; Greenberg, D.R.; Ebersman, B.; Berg, G.D.; Ahlgren, D.C.; Jeng, S.J.; Harame, D.L.; Subbanna, S.; Ronsheim, P.; Longstreet, M.; Colavito, D.; Stein, K.J.; Schonenberg, K.T.;
A SiGe HBT BiCMOS technology for mixed signal RF applications
1997 / IEEE / 0-7803-3916-9
By: Ahlgren, D.C.; Freeman, G.; Meyerson, B.; Harame, D.; Wu, S.; Martin, B.; Kiesling, D.; Schonenberg, K.; Stein, K.; Jeng, S.J.; Nguyen-Ngoc, D.; Malinowski, J.; Greenberg, D.; Groves, R.; Subbanna, S.;
Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies
1997 / IEEE / 0-7803-4100-7
By: Malinowski, J.; Colavito, D.; Nguyen-Ngoc, D.; Stein, K.; Jeng, S.J.; Subbanna, S.; Schonenberg, K.; Freeman, G.; Ahlgren, D.; Moniz, J.; Bergeault, E.; Girard, P.; Rivier, M.; Greenberg, D.R.; Meyerson, B.; Harame, D.L.;
Si/SiGe p-Channel MOSFETs
1991 / IEEE
By: Tejwani, M.J.; Kesan, V.P.; Subbanna, S.; Iyer, S.S.; Mis, D.J.; Restle, P.J.;
Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process
1998 / IEEE / 0-7803-4497-9
By: Malinowski, J.; Larson, L.E.; Subbanna, S.; Volant, R.; Case, M.; Chan, P.; Harame, D.; Laney, D.C.;
Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process
1999 / IEEE / 0-7803-5135-5
By: Subbanna, S.; Harame, D.; Chan, P.; Malinowski, J.; Volant, R.; Larson, L.E.; Laney, D.C.; Case, M.;
A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology
1999 / IEEE
By: Cressler, J.D.; Niu, G.; Subbanna, S.; Mathew, S.J.;
A 0.24 /spl mu/m SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f/sub t/ HBT and 0.18 /spl mu/m L/sub ett/ CMOS
1999 / IEEE / 0-7803-5712-4
By: Subbanna, S.; Hershberger, D.; Dunn, J.S.; Harame, D.L.; St. Onge, S.A.; Zierak, M.; Orner, B.; Malinowski, J.; Lanzerotti, L.; Joseph, A.; Johnson, R.; Kilpatrick, S.; Ahlgren, D.C.; Gray, P.; Gordon, M.; Geiss, P.; Feilchenfeld, N.; Coolbaugh, D.; Groves, R.; Stein, K.; Schonenberg, K.; Jeng, J.; Jagannathan, B.; Freeman, G.;
SiGe BiCMOS technology for RF device and design applications
1999 / IEEE / 0-7803-5454-0
By: Ahlgren, D.C.; Subbanna, S.; Groves, R.; Freeman, G.; King, N.;
Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology
1999 / IEEE
By: Mathew, S.J.; Guofu Niu; Subbanna, S.; Palmer, M.J.; Clark, S.D.; Cressler, J.D.; Banerjee, G.;
A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications
1999 / IEEE / 0-7803-5410-9
By: Jagannathan, B.; Hugo, G.; Huang, F.; Groves, R.; Greenberg, D.R.; Ahlgren, D.; Jeng, S.J.; Subbanna, S.; Volant, R.; Freeman, G.; Stein, K.; Schonenberg, K.; Johnson, J.;
Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-a-chip applications
1999 / IEEE / 0-7803-5410-9
By: Herman, D.; Dunn, J.; Harame, D.; Freeman, G.; Greenberg, D.; Ahlgren, D.; Meyerson, B.; Subbanna, S.; Tayrani, R.; Sakamoto, G.; Thornberry, D.; Schvan, P.; Greshishchev, Y.;
A channel resistance derivative method for effective channel length extraction in LDD MOSFETs
2000 / IEEE
By: Mathew, S.J.; Cressler, J.D.; Niu, G.; Subbanna, S.;
Trends in silicon germanium BiCMOS integration and reliability
2000 / IEEE / 0-7803-5860-0
By: Ahlgren, D.; Voldman, S.; Freeman, G.; Subbanna, S.; Watson, K.; Johnson, R.; Feilchenfeld, N.; Joseph, A.; St. Onge, S.; Harame, D.; Dunn, J.;
HBT low-noise performance in a 0.18 /spl mu/m SiGe BiCMOS technology
2000 / IEEE / 0-7803-6280-2
By: Larson, L.; Webster, C.; Harvey, D.S.; Radisic, V.; Subbanna, S.; Freeman, G.; Ahlgren, D.; Greenberg, D.R.;
HBT low-noise performance in a 0.18 /spl mu/m SiGe BiCMOS technology
2000 / IEEE / 0-7803-5687-X
By: Ahlgren, D.; Greenberg, D.R.; Larson, L.; Webster, C.; Freeman, G.; Harvey, D.S.; Radisic, V.; Subbanna, S.;
Fabrication of high frequency passives on BiCMOS silicon substrates
2000 / IEEE / 0-7803-5687-X
By: Begle, E.; Groves, R.; Subbanna, S.; Malinowski, J.; Laney, D.; Volant, R.; Chan, P.; Sakamoto, G.; Larson, L.;
Prospects of silicon-germanium-based technology for very high-speed circuits
2000 / IEEE / 0-7803-5687-X
By: Freeman, G.; Johnson, J.; Subbanna, S.; Meyerson, B.; Herman, D.; Groves, R.; Volant, R.;
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs
2001 / IEEE / 0-7803-6591-7
By: Dickey, C.; Mecke, J.; Ahlgren, D.; Freeman, G.; Larson, L.; Subbanna, S.; Stein, K.; Meyerson, B.; Herman, D.; Chon, W.; Rowe, D.; Dunn, J.; Harame, D.; Soyuer, M.; Groves, R.; Bacon, P.; Rincon, A.;
Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process
2001 / IEEE
By: Malinowski, J.; Chan, P.; Larson, L.E.; Laney, D.C.; Harame, D.; Case, M.; Volant, R.; Subbanna, S.;
Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
2001 / IEEE / 0-7803-7129-1
By: Subbanna, S.; Freeman, G.; Jagannathan, B.; Greenberg, D.; Rieh, J.-S.;
A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect
2001 / IEEE / 0-7803-7019-8
By: Joseph, A.; Rylyakov, A.; Zierak, M.; Wuthrich, R.; Geiss, P.; He, Z.; Liu, X.; Orner, B.; Johnson, J.; Freeman, G.; Ahlgren, D.; Jagannathan, B.; Lanzerotti, L.; Ramachandran, V.; Malinowski, J.; Chen, H.; Chu, J.; Gray, P.; Johnson, R.; Dunn, J.; Subbanna, S.; Schonenberg, K.; Harame, D.; Groves, R.; Watson, K.; Jadus, D.; Meghelli, M.; Coolbaugh, D.;
Current status and future trends of SiGe BiCMOS technology
2001 / IEEE
By: Harame, D.L.; Ahlgren, D.C.; Webster, C.S.; Watson, K.M.; Victor, A.M.; Subbanna, S.; Joseph, A.J.; Zampardi, P.J.; Johnson, R.A.; Hendersen, G.N.; Groves, R.A.; Gillis, J.D.; Freeman, G.G.; Dunn, J.S.; Coolbaugh, D.D.;
A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure
2001 / IEEE
By: Chen, H.; Stricker, A.; Greenberg, D.; Schonenberg, K.T.; Johnson, J.; Rieh, J.-S.; Khater, M.; Jeng, S.J.; Subbanna, S.; Stein, K.; Jagannathan, B.; Freeman, G.; Ahlgren, D.;
40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology
2001 / IEEE / 0-7803-6663-8
By: Sorna, M.; Rylyakov, A.; Zier, S.; Meghelli, M.; Kwark, Y.; Freeman, G.; Tanji, T.; Joseph, A.; Jagannathan, B.; Subbanna, S.; Rieh, J.; Walter, K.; Schreiver, O.;
0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS
2002 / IEEE / 0-7803-7335-9
By: Harame, D.; Rylyakov, A.; Coolbaugh, D.; Joseph, A.; Tanji, T.; Herman, D.; Schreiber, O.; Sorna, M.; Freeman, G.; Meghelli, M.; Groves, R.; Greenberg, D.; Dickey, C.; Dunn, J.; Doherty, M.; Subbanna, S.;
Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress
2002 / IEEE / 0-7803-7352-9
By: Freeman, G.; Joseph, A.; Wang, P.-C.; Yang, Z.; Subbanna, S.; Watson, K.; Rieh, J.-S.; Guarin, F.;
Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
2002 / IEEE
By: Mengistu, E.; Schonenberg, K.T.; Jeng, S.J.; Groves, R.; Greenberg, D.R.; Golan, F.; Johnson, J.; Florkey, J.; Chen, H.; Angell, D.; Rieh, J.-S.; Pagette, F.; Khater, M.; Jagannathan, B.; Subbanna, S.; Stein, K.; Freeman, G.; Ahlgren, D.; Stricker, A.; Smith, P.; Schnabel, C.M.;
113-GHz fT graded-base SiGe HBTs
1993 / IEEE
By: Crabbe, E.; Meyerson, B.; Subbanna, S.; Patton, G.; Comfort, J.; Stanis, C.; Gilbert, M.; Chu, J.; Cotte, J.; Megdanis, A.; Harame, D.; Stork, J.;
Advanced passive devices for enhanced integrated RF circuit performance
2002 / IEEE / 0-7803-7239-5
By: Coolbaugh, D.; Eshun, E.; Wang, X.; Volant, R.; Wang, D.; Subbanna, S.; St Ongel, S.; Watson, K.; Stein, K.; Ramachandran, V.; He, Z.; Harnmad, A.; Johnson, J.; Hararnel, D.; Groves, R.;
Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications
2002 / IEEE / 0-7803-7239-5
By: Freeman, G.; Subbanna, S.; Greenberg, D.; Jagannathan, B.; Groves, R.; Volant, R.; Meyerson, B.; Herman, D.; Stein, K.; Martin, B.; Ahlgren, D.;
Advanced passive devices for enhanced integrated RF circuit performance
2002 / IEEE / 0-7803-7246-8
By: Wang, D.; Volant, R.; St Onge, S.; Stein, K.; Ramachandran, V.; He, Z.; Hammad, M.; Johnson, J.; Harame, D.; Groves, R.; Eshun, E.; Coolbaugh, D.; Watson, K.; Subbanna, S.; Wang, X.;
40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology
2002 / IEEE
By: Jae-Sung Rieh; Meghelli, M.; Freeman, G.; Subbanna, S.; Joseph, A.; Jagannathan, B.; Kwark, Y.; Walter, K.; Schreiber, O.M.; Tanji, T.; Sorna, M.A.; Rylyakov, A.; Zier, S.;
A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology
2002 / IEEE
By: Freeman, G.G.; Ahlgren, D.A.; Schnabel, C.M.; Chinthakindi, A.K.; Groves, R.A.; Stein, K.J.; Meghelli, M.; Jagannathan, B.; Rylyakov, A.V.; Subbanna, S.;
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
2002 / IEEE / 4-89114-027-5
By: Koester, S.J.; Qiqing Christine Ouyang; Hennan, D.A.; Subbanna, S.; Grill, A.; Chu, J.O.;
Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance
2002 / IEEE / 0-7803-7561-0
By: Chen, H.; Khater, M.; Angell, D.; Smith, P.; Jeng, S.-J.; Jagannathan, B.; Ahlgren, D.C.; Subbanna, S.; Stein, K.; Joseph, A.; Freeman, G.; Stricker, A.; Schonenberg, K.; Rieh, J.-S.; Pagette, F.;
Structural dependence of the thermal resistance of trench-isolated bipolar transistors
2002 / IEEE / 0-7803-7561-0
By: Johnson, J.; Rieh, J.-S.; Subbanna, S.; Freeman, G.; Greenberg, D.; Furkay, S.;
Product applications and technology directions with SiGe BiCMOS
2002 / IEEE / 0-7803-7447-9
By: Cooper, P.; Johnson, J.; St Onge, S.; Marangos, V.S.; Subbanna, S.; Volant, R.; Eshun, E.; Stein, K.; Groves, R.; Coolbaugh, D.; Joseph, A.; Harame, D.; Freeman, G.; Dunn, J.; Wang, X.; Wang, D.; Ahlgren, D.; Ramachandran, V.; Rieh, J.;
Enhanced T0values in GaSb/AlSb multiquantum well heterostructures
1987 / IEEE
By: Pilkuhn, M.; Stuber, R.; Zielinski, E.; Hausser, S.; Griffiths, G.; Schweizer, H.; Subbanna, S.; Kroemer, H.;
An investigation of proton energy effects in SiGe HBT technology
2002 / IEEE
By: Shiming Zhang; Reed, R.A.; Kim, H.S.; Marshall, P.W.; Bakhru, H.; Williams, J.R.; Isaacs-Smith, T.; Guofu Niu; Groves, R.; Subbanna, S.; Cressler, J.D.;
SiGe HBTs with cut-off frequency of 350 GHz
2002 / IEEE / 0-7803-7462-2
By: Rieh, J.-S.; Jagannathan, B.; Subbanna, S.; Stein, K.; Freeman, G.; Ahlgren, D.; Volant, R.; Vaed, K.; Stricker, A.; Smith, P.; Schnabel, C.; Pagette, F.; Khater, M.; Jeng, S.-J.; Greenberg, D.; Golan, F.; Florkey, J.; Chinthakindi, A.; Angell, D.; Schonenberg, K.T.; Chen, H.;
Micromachined on-chip inductor performance analysis
2003 / IEEE / 0-7803-7744-3
By: Fedder, G.K.; Mukherjee, T.; Jadus, D.; Subbanna, S.; Groves, R.; Zhu, X.;
Transistor design and application considerations for >200-GHz SiGe HBTs
2003 / IEEE
By: Jae-Sung Rieh; Shwu-Jen Jeng; Jagannathan, B.; Freeman, G.; Subbanna, S.; Ahlgren, D.C.; Stricker, A.D.;
Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/=375 GHz/210 GHz
2003 / IEEE / 0-7803-7704-4
By: Subbanna, S.; Huajie Chen; Jagannathan, B.; Jae-Sung Rieh; Schonenberg, K.; Freeman, G.; Ahlgren, D.; Khater, M.; Shwu-Jen Jeng;
Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density
2003 / IEEE
By: Subbanna, S.; Freeman, G.; Joseph, A.J.; Ping-Chuan Wang; Jae-Sung Rieh; Guarin, F.; Watson, K.M.; Zhijian Yang;
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
2003 / IEEE
By: Jae-Sung Rieh; Jagannathan, B.; Chan, K.; Meghelli, M.; Schonenberg, K.; Freeman, G.; Subbanna, S.; Ahlgren, D.;
Product applications and technology directions with SiGe BiCMOS
2003 / IEEE
By: Subbanna, S.; Marangos, V.S.; Stein, K.J.; Groves, R.; Volant, R.; Coolbaugh, D.; Harame, D.L.; Freeman, G.; Dunn, J.; Joseph, A.J.; Wang, X.; Dawn Wang; Ahlgren, D.; Ramachandran, V.; Jagannathan, B.; Jae-Sung Rieh; Johnson, J.B.; Cooper, P.; Eshun, E.; Onge, S.S.;
A look into the future for SiGe HBTs
2003 / IEEE / 0-7803-7820-2
By: Jagannathan, B.; Dunn, J.; Rieh, J.; Freeman, G.; Harame, D.L.; Subbanna, S.; Orner, B.; Greenberg, D.; Cottrell, P.; Ahlgren, D.; Yang, Z.; Guarin, F.; Johnson, J.; Joseph, A.;
Wafer level reliability evaluation of 120GHz SiGe HBTs
2004 / IEEE / 0-7803-8777-5
By: Joseph, A.; Wang, P.; Yang, Z.; Rieh, J.S.; Guarin, F.; Subbanna, S.; Freeman, G.;
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
2004 / IEEE / 0-7803-8684-1
By: Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; van Bentum, R.; Grasshoff, G.; Schwan, C.; Ehrichs, E.; Goad, S.; Buller, J.; Krishnan, S.; Greenlaw, D.; Raab, M.; Kepler, N.; Yang, H.S.; Malik, R.; Narasimha, S.; Li, Y.; Divakaruni, R.; Agnello, P.; Allen, S.; Antreasyan, A.; Arnold, J.C.; Bandy, K.; Belyansky, M.; Bonnoit, A.; Bronner, G.; Chan, V.; Chen, X.; Chen, Z.; Chidambarrao, D.; Chou, A.; Clark, W.; Crowder, S.W.; Engel, B.; Harifuchi, H.; Huang, S.F.; Jagannathan, R.; Jamin, F.F.; Kohyama, Y.; Kuroda, H.; Lai, C.W.; Lee, H.K.; Lee, W.-H.; Lim, E.H.; Lai, W.; Mallikarjunan, A.; Matsumoto, K.; McKnight, A.; Nayak, J.; Ng, H.Y.; Panda, S.; Rengarajan, R.; Steigerwalt, M.; Subbanna, S.; Subramanian, K.; Sudijono, J.; Sudo, G.; Sun, S.-P.; Tessier, B.; Toyoshima, Y.; Tran, P.; Wise, R.; Wong, R.; Yang, I.Y.; Wann, C.H.; Su, L.T.; Horstmann, M.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Salz, H.;
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
2005 / IEEE / 4-900784-00-1
By: Leobandung, E.; Nayakama, H.; Mocuta, D.; Miyamoto, K.; Angyal, M.; Meer, H.V.; McStay, K.; Ahsan, I.; Allen, S.; Azuma, A.; Belyansky, M.; Bentum, R.-V.; Cheng, J.; Chidambarrao, D.; Dirahoui, B.; Fukasawa, M.; Gerhardt, M.; Gribelyuk, M.; Halle, S.; Harifuchi, H.; Harmon, D.; Heaps-Nelson, J.; Hichri, H.; Ida, K.; Inohara, M.; Inouc, I.C.; Jenkins, K.; Kawamura, T.; Kim, B.; Ku, S.-K.; Kumar, M.; Lane, S.; Liebmann, L.; Logan, R.; Melville, I.; Miyashita, K.; Mocuta, A.; O'Neil, P.; Ng, M.-F.; Nogami, T.; Nomura, A.; Norris, C.; Nowak, E.; Ono, M.; Panda, S.; Penny, C.; Radens, C.; Ramachandran, R.; Ray, A.; Rhee, S.-H.; Ryan, D.; Shinohara, T.; Sudo, G.; Sugaya, F.; Strane, J.; Tan, Y.; Tsou, L.; Wang, L.; Wirbeleit, F.; Wu, S.; Yamashita, T.; Yan, H.; Ye, Q.; Yoneyama, D.; Zamdmer, D.; Zhong, H.; Zhu, H.; Zhu, W.; Agnello, P.; Bukofsky, S.; Bronner, G.; Crabbe, E.; Freeman, G.; Huang, S.-F.; Ivers, T.; Kuroda, H.; McHerron, D.; Pellerin, J.; Toyoshima, Y.; Subbanna, S.; Kepler, N.; Su, L.;
VIA-1 staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification
1984 / IEEE
By: Caine, E.J.; Subbanna, S.; Kroemer, H.; Merz, J.L.; Cho, A.Y.;
SiGe HBT Performance Improvements from Lateral Scaling
1999 / IEEE / 2-86332-245-1
By: Freeman, G.; Subbanna, S.; Walter, K.; Greenberg, D.R.;
High-performance silicon-germanium technology
2005 / IEEE / 0-7803-9040-7
By: Subbanna, S.; Harame, D.; Joseph, A.; Rim, K.; Koester, S.; Freeman, G.;

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