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Author: Shum, D.

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Event-Related Potential Evidence of Similarities and Differences between Prospective Memory and Vigilance
2011 / IEEE / 978-1-4577-0644-8
By: Shum, D.; Ji-fang Cui; Chan, R.C.K.; Ya Wang;
Highly Reliable Flash Memory with Self-Aligned Split-Gate Cell Embedded into High Performance 65nm CMOS for Automotive & Smartcard Applications
2012 / IEEE / 978-1-4673-1081-9
By: Shum, D.; Power, J.R.; Tran, L.C.; Lin, Y.T.; Hung, C.W.; Kuo, H.H.; Ho, C.W.; Huang, C.M.; Hsieh, C.T.; Kern, T.; Duschl, R.; Strenz, R.; Dickenscheid, W.; Paprotta, S.; Andersen, E.O.; Iserhagen, A.; Gratz, A.; Rohrich, M.; Tempel, G.; Pissors, V.; Bukethal, C.; Langheinrich, W.; Tan, C.H.; Hsiao, J.; Ho, K.; Suryaputra, E.; Ullmann, R.;
Highly reliable furnace-grown N/sub 2/O tunnel oxide for a microcontroller with embedded flash EEPROM
1996 / IEEE / 0-7803-2753-5
By: Ko-Min Chang; Paulson, W.M.; Shum, D.; Maiti, B.; Kuo, C.; Weidner, M.; Tobin, P.J.;
A microcontroller with 100 K bytes embedded flash EEPROM
1995 / IEEE / 0-7803-3062-5
By: Shum, D.; Choe, H.; Weidner, M.; Toms, T.; Kuo, C.; Smith, P.; Ko-Min Chang;
An advanced flash memory technology on SOI
1998 / IEEE / 0-7803-4774-9
By: Shum, D.; Burnett, D.; Baker, K.;
Thermal modeling of diamond-based power electronics packaging
1999 / IEEE / 0-7803-5264-5
By: Windischmann, H.; Shum, D.; Fabis, P.M.;
0.18 um modular triple self-aligned embedded split-gate flash memory
2000 / IEEE / 0-7803-6305-1
By: Chan, K.; Johnson, J.; Hyun Koo Lee; Houlihan, K.; Harrington, J.; Mih, R.; Chung Lam; Levi, A.; Lee, D.; Lo, C.; Shum, D.; Kisang Kim; Gruensfelder, C.; Schmidt, A.; Jiang Yan; Bomy Chen;
Embedded nonvolatile memories
2001 / IEEE / 0-7803-6677-8
By: Shum, D.;
Highly scalable flash memory with novel deep trench isolation embedded into highperformance cmos for the 90nm node & beyond
2005 / IEEE / 0-7803-9268-X
By: Shum, D.; Broze, R.; Yang, A.; Chan, N.; Hecht, V.; Pescini, L.; Kim, S.R.; Han, K.J.; Kakoschke, R.; Stiftinger, M.; Tilke, A.T.;
Novel Buried Bitline Integration for compact Cell Design in High-Performance embedded Flash Memory with Deep Trench Isolation
2006 / IEEE / 1-4244-0027-9
By: Kakoschke, R.; Stiftinger, M.; Pescini, L.; Tilke, A.T.; Shum, D.; Han, K.J.; Kim, S.R.; Chan, N.;
A multilevel model for movement rehabilitation in Traumatic Brain Injury (TBI) using Virtual Environments
2006 / IEEE / 1-4244-0280-8
By: Shum, D.; Thomas, P.; Wilson, P.H.; Eldridge, R.; Mumford, N.; Rudolph, H.; Gugliemetti, M.; Duckworth, J.;
Highly scalable flash memory embedded into high-performance CMOS for the 90nm node and beyond
2006 / IEEE / 1-4244-0161-5
By: Pescini, L.; Tilke, A.T.; Shum, D.; Han, K.J.; Kakoschke, R.;
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices
2006 / IEEE / 1-4244-0438-X
By: Han, J.P.; Utomo, H.; Ieong, M.; Sudijono, J.; Ku, J.H.; Shum, D.; Hierlemann, M.; Amos, R.; Chiulli, G.; Lindsay, R.; Kim, S.D.; Loesing, R.; Burns, L.; Turansky, A.; Madan, A.; St Lawrence, B.; Davis, R.; Murphy, R.; Li, J.; Li, J.; Kim, J.J.; Zhuang, H.; Mishra, S.; Schepis, D.; Gutmann, A.; Teo, L.W.; Rovedo, N.; Luo, Z.; Krishnasamy, R.; Stierstorfer, R.; Chong, Y.F.; Fang, S.; Ng, H.; Holt, J.; Adam, T.N.; Kempisty, J.;
Highly Scalable Embedded Flash Memory With Deep Trench Isolation and Novel Buried Bitline Integration for the 90-nm Node and Beyond
2007 / IEEE
By: Tilke, A.T.; Kyung Joon Han; Hecht, V.; Sungrae Kim; Bauer, M.; Pescini, L.; Shum, D.; Kakoschke, R.; Stiftinger, M.; Chan, N.;
Improved Reliability of a High-k IPD Flash Cell through use of a Top-oxide
2007 / IEEE / 1-4244-0752-4
By: Shum, D.; Langheinrich, W.; Andersen, E.O.; Tempel, G.; Gong, Y.; Strenz, R.; Allinger, R.; van der Zanden, K.; Power, J.R.; Kakoschke, R.; Pescini, L.;
Flash-based Field Programmable Gate Array Technology with Deep Trench Isolation
2007 / IEEE / 978-1-4244-0786-6
By: Shum, D.; Cronquist, B.; Hecht, V.; Sungrae Kim; Ben Leung; Tilke, A.; Nigel Chan; Kyung Joon Han; Kakoschke, R.; Stiftinger, M.; Pescini, L.;
Improved Retention for a Al2O3 IPD Embedded Flash Cell without Top-Oxide
2008 / IEEE / 978-1-4244-1547-2
By: van der Zanden, K.; Kakoschke, R.; Strenz, R.; Estel, H.; Haeupel, J.; Allinger, R.; Bogacz, S.; Gong, Y.; Shum, D.; Power, J.R.;
A virtual tabletop workspace for upper-limb rehabilitation in Traumatic Brain Injury (TBI): A multiple case study evaluation
2008 / IEEE / 978-1-4244-2700-0
By: Williams, G.; Rudolph, H.; Shum, D.; Thomas, P.; Wilson, P.H.; Guglielmetti, M.; Eldridge, R.; Duckworth, J.; Mumford, N.;
Scaling of Stacked gate technology for embedded NVM
2008 / IEEE / 978-1-4244-2185-5
By: Strenz, R.; Kakoschke, R.; Shum, D.;
ALD-Al2O3 as an Inter-Poly Dielectric for a Product Demonstrator in a Proven eFlash Technology
2009 / IEEE / 978-1-4244-3762-7
By: Tempel, G.; Power, J.R.; Duch, A.; Stiftinger, M.; Erler, F.; Sikorski, R.; Strenz, R.; Duschl, R.; Kakoschke, R.; Canning, M.; Jaschke, G.; Shum, D.; Allinger, R.;

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