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Author: Shimokawa, J.
Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects2008 / IEEE / 978-1-4244-2377-4
By: Eimori, T.; Shiraishi, K.; Kamiyama, S.; Mise, N.; Nakamura, M.; Morooka, T.; Tachibana, A.; Sugino, S.; Arimura, H.; Shimokawa, J.; Umezawa, N.; Sato, M.; Ohji, Y.; Nara, Y.; Nabatame, T.; Aoyama, T.; Yamada, K.; Watanabe, H.; Yamabe, K.;
Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects2009 / IEEE / 978-1-4244-2888-5
By: Ohji, Y.; Nakamura, M.; Suzuki, C.; Sato, M.; Shimokawa, J.;