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Author: S. C. Song
Effects of gate edge profile on off-state leakage suppresion in metal gate/high-k dielectric n-type metal-oxide-semiconductor field effect transistors2007 / American Institute of Physics
By: Chang Yong Kang; Rino Choi; S. C. Song; B. H. Lee;
Identification of sub-band-gap absorption features at the HfO2Si(100) interface via spectroscopic ellipsometry2007 / American Institute of Physics
By: J. Price; P. S. Lysaght; S. C. Song; Hong-Jyh Li; A. C. Diebold;
Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility2006 / American Institute of Physics
By: P. D. Kirsch; M. A. Quevedo-Lopez; H. -J. Li; Y. Senzaki; J. J. Peterson; S. C. Song; S. A. Krishnan; N. Moumen; J. Barnett; G. Bersuker; P. Y. Hung; B. H. Lee; T. Lafford; Q. Wang; D. Gay; J. G. Ekerdt;