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Author: Ronsheim, P.

Results

Ultra-Low Emissivity Alpha-Particle Detection
2012 / IEEE
By: Rauch, S.E.; Zhu, Z.; Ronsheim, P.; Tang, H.H.K.; McNally, B.D.; Gordon, M.S.; Rodbell, K.P.; Coleman, S.;
Leakage issues in failure analysis of p+ SiGe active area short monitor
2011 / IEEE / 978-1-4577-0158-0
By: Murphy, R.J.; Seung Chul Lee; Molella, C.M.; Nxumalo, J.; Ronsheim, P.; Johnson, G.M.; Arya, A.; Lee, J.; Chow, Y.T.C.; Shenzhi Yang; Chung Woh Lai; Onoda, H.; Bum Ki Moon; Daleo, C.;
Modifications of growth of strained silicon and dopant activation in silicon by cryogenic ion implantation and recrystallization annealing
2012 / IEEE / 978-1-4673-1257-8
By: Eunha Kim; Wahl, J.A.; Demarest, J.J.; Ronsheim, P.; Paruchuri, V.; Li, J.; Wall, D.R.; Teehan, S.; Berliner, N.C.; Itokawa, H.;
Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs
1997 / IEEE / 0-7803-3916-9
By: Malinowski, J.; Nguyen-Ngoc, D.; Freeman, G.; Greenberg, D.R.; Ebersman, B.; Berg, G.D.; Ahlgren, D.C.; Jeng, S.J.; Harame, D.L.; Subbanna, S.; Ronsheim, P.; Longstreet, M.; Colavito, D.; Stein, K.J.; Schonenberg, K.T.;
Dopant redistribution in SOI during RTA: a study on doping in scaled-down Si layers
1999 / IEEE / 0-7803-5410-9
By: Jones, E.C.; Heemyong Park; Rausch, W.; Young, R.; Cohen, G.M.; D'Emic, C.; Cabral, C., Jr.; Ronsheim, P.;
Threshold-voltage anomaly in sub-0.2 /spl mu/m DRAM buried-channel pFET devices
2001 / IEEE / 0-7803-6412-0
By: Inaba, S.; Katsumata, R.; Murthy, C.S.; Ronsheim, P.; Oldiges, P.; Rengarajan, R.;
Strained Si NMOSFETs for high performance CMOS technology
2001 / IEEE / 4-89114-012-7
By: Ieong, M.; Ronsheim, P.; Kanarsky, T.; Ott, J.; Mooney, P.M.; Grill, A.; Hargrove, M.; Koester, S.; Rim, K.; Chu, J.; Wong, H.-S.P.;
Threshold voltage roll-up/roll-off characteristic control in sub-0.2-/spl mu/m single workfunction gate CMOS for high-performance DRAM applications
2002 / IEEE
By: Rengarajan, R.; Inaba, S.; Akatsu, H.; Katsumata, R.; Ronsheim, P.; Bronner, G.B.; Sunouchi, K.; Murthy, C.S.;
Gate postdoping to decouple implant/anneal for gate, source/drain, and extension: maximizing polysilicon gate activation for 0.1 /spl mu/m CMOS technologies
2002 / IEEE / 0-7803-7312-X
By: Li, J.; Ronsheim, P.; Snare, J.; Fung, S.; Narasimha, S.; Dokumaci, O.; Lee, B.H.; Hughes, T.; Shukla, S.; Doris, B.; Li, Y.; Khare, M.; Mocuta, A.C.; Schepis, D.; Park, H.; Lavoie, C.; Maciejewski, E.; O'Neil, P.; Sleight, J.; Ajmera, A.; Varekamp, P.; Domenicucci, A.;
Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/
2002 / IEEE / 4-89114-027-5
By: Hegde, S.; Cardone, F.; Dokumaci, O.; Ronsheim, P.; Mantz, U.; Kam-leung Lee; Huilong Zhu; Saunders, P.;
Sub-30 nm P/sup +/ abrupt junction formation in strained Si/Si/sub 1-x/Ge/sub x/ MOS device
2002 / IEEE / 0-7803-7462-2
By: Saunders, P.; Kozlowski, P.; Ronsheim, P.; Zhu, H.; Ott, J.; Cardone, F.; Lee, K.L.; Jones, E.C.; Chu, J.; Koester, S.;
Thermally robust dual-work function ALD-MN/sub x/ MOSFETs using conventional CMOS process flow
2004 / IEEE / 0-7803-8289-7
By: Park, D.-G.; Luo, Z.J.; Wann, C.H.; Sekiguchi, A.; Ng, H.; Rengarajan, R.; Jammy, R.; Wise, R.; Steegen, A.; Narayanan, V.; D'Emic, C.; Kozlowski, P.; Duch, E.; Kim, H.; Ku, V.; Mitchell, R.; Chakravarti, A.; Ronsheim, P.; Gluschenkov, O.; Bruley, J.; Chudzik, M.; Chou, A.; Lee, B.H.; Jamison, P.; Edleman, N.; Zhu, W.; Nguyen, P.; Wong, K.; Cabral, C.;
Threshold voltage control in NiSi-gated MOSFETs through SIIS
2005 / IEEE
By: Kedzierski, J.; Meikei Ieong; Ott, J.A.; Kozlowski, P.M.; Boyd, D.; Ronsheim, P.; Cabral, C., Jr.; Zafar, S.;
0.15um Leff Buried Channel PFET Device Design
1999 / IEEE / 2-86332-245-1
By: Divakaruni, R.; Dellow, M.; Murphy, C.S.; Ronsheim, P.; Slisher, D.; Lee, H.; Butt, S.; Faltermeier, J.; Weybright, M.; Rengarajan, R.;
Selective epitaxial channel ground plane thin SOI CMOS devices
2005 / IEEE / 0-7803-9268-X
By: Dokumaci, O.; Kawanaka, S.; Mo, R.; Yin, H.; Boyd, D.; Holt, J.; Cai, J.; Ieong, M.; Zhibin Ren; Haensch, W.; Sung, C.Y.; Wang, J.; Ronsheim, P.; Sato, T.;
Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes
2005 / IEEE / 0-7803-9223-X
By: Chudzik, M.; Chou, A.; Shepard, J.F.Jr.; Wenjuan Zhu; Rottenkolber, E.; Ronsheim, P.; Collins, C.; Mo, R.; Loebl, A.; Kirsch, P.; Wei He; Freiler, M.;
Synthesis and control of ultra thin gate oxides for the 90 and 65 nm nodes
2005 / IEEE / 0-7803-9223-X
By: Chudzik, M.; Chou, A.; Shepard, J.F.Jr.; Wenjuan Zhu; Rottenkolber, E.; Ronsheim, P.; Collins, C.; Mo, R.; Loebl, A.; Kirsch, P.; Wei He; Freiler, M.;
Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond
2006 / IEEE / 1-4244-0005-8
By: Paruchuri, V.K.; Bojarczuk, N.A.; Narayanan, V.; Chen, T.C.; Shahidi, G.; Guha, S.; Ieong, M.; Chudzik, M.P.; Jammy, R.; Ronsheim, P.; Batson, P.E.; Wang, Y.; Lacey, D.L.; Locquet, J.-P.; Jamison, P.; Callegari, A.; Cartier, E.; Steen, M.; Copel, M.; Arnold, J.; Brown, S.; Stathis, J.; Zafar, S.; Kim, Y.H.; Doris, B.; Linder, B.P.;
Ultra-Thin SOI CMOS Using Laser Spike Anneal
2006 / IEEE / 1-4244-0181-4
By: Ieong, M.; Sung, C.Y.; Lee, J.; Ronsheim, P.; Ott, J.; Lee, K.L.; Haensch, W.; Pan, J.; Black, L.; Dokumaci, O.; Gluschenkov, O.; Singh, D.V.; Hergenrother, J.M.; Sleight, J.; Ren, Z.;
Band Edge High-/spl kappa/ /Metal Gate n-MOSFETs Using Ultra Thin Capping Layers
2007 / IEEE / 1-4244-0584-X
By: Kim, Y.H.; Brown, S.L.; Linder, B.P.; Narayanan, V.; Wang, Y.; Chen, T.C.; Paruchuri, V.K.; Jammy, R.; Ronsheim, P.;
Impact of Mobile Charge on Matching Sensitivity in SOI Analog Circuits
2007 / IEEE / 1-4244-0652-8
By: Siljenberg, D.; Ronsheim, P.; Rausch, W.; Passaro, M.; Connell, M.; Onsongo, D.; Oldiges, P.; Grady, M.;
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
2008 / IEEE / 978-1-4244-1802-2
By: Hamaguchi, M.; Yin, H.; Ishimaru, K.; Shahidi, G.; Park, D.; Takayanagi, M.; Sadana, D.K.; de Souza, J.P.; Fogel, K.; Utomo, H.; Rovedo, N.; Zhang, R.; Ronsheim, P.; Zhu, Z.; Domenicucci, A.G.; Li, J.; Biscardi, M.; Kang, H.; Ott, J.A.; Takasu, Y.; Ohuchi, K.; Iijima, R.; Hasumi, R.; Sung, C.Y.; Saenger, K.L.;
Formation and Reduction of Embedded Contamination Defects Detected after FEOL Poly Patterning
2006 / IEEE / 1-4244-0254-9
By: Zaitz, M.; Hong Lin; Ronsheim, P.; St Lawrence, M.; Colwill, B.; Arndt, R.; Chienfan Yu; Crispo, G.; Bruley, J.;
High performance and highly stable ultra-thin oxynitride for CMOS applications
2008 / IEEE / 978-1-4244-2185-5
By: Shepard, J.; Wenjuan Zhu; Leobandung, E.; Mocuta, D.; Schepis, D.; Ronsheim, P.; Ray, A.; Wei He;
Electron holography for 2-D dopant profiling
2009 / IEEE / 978-1-4244-3319-3
By: Huiling Shang; Ronsheim, P.; Gluschenkov, O.; Jun Yuan; Gribelyuk, M.A.;
Investigation of an on product high-k/metal metrology methodology using an in-line, high throughput XPS measurement technique
2010 / IEEE / 978-1-4244-6519-4
By: Kwan, M.; Ronsheim, P.; Tai, L.; Shepard, J.; Larson, T.; Rangarajan, S.; Klare, M.; Min Dai; Chudzik, M.P.;

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