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Author: Peter J. Van Veldhoven
Distribution control of 1.55¼m InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy2009 / American Institute of Physics
By: Hao Wang; Jiayue Yuan; Torsten Rieger; Peter J. van Veldhoven; Peter Nouwens; Tom J. Eijkemans; Tjibbe de Vries; Barry Smalbrugge; Erik Jan Geluk; Richard Nötzel;
Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy2009 / American Institute of Physics
By: Jiayue Yuan; Hao Wang; Peter J. van Veldhoven; Richard Nötzel;
Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy2009 / American Institute of Physics
By: Junji Kotani; Peter J. van Veldhoven; Richard Nötzel;