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Author: Nagayama, T.

Results

Application of cluster Ion (carbon) implantation for strain applications
2012 / IEEE / 978-1-4673-1257-8
By: Franca, D.; Rodgers, M.; Novak, S.; Herman, J.; Nagayama, T.; Hamamoto, N.; Vivekanand, S.; Koga, Y.; Nakashima, Y.; Onoda, H.; Tokoro, N.; Sekar, K.;
Phosphorous transient enhanced diffusion suppression with cluster carbon co-implantation at low temperature
2012 / IEEE / 978-1-4673-1257-8
By: Onoda, H.; Hashimoto, M.; Umisedo, S.; Koga, Y.; Nagayama, T.; Hamamoto, N.; Nakashima, Y.;
Transmission line approach to 2D full-tensor anisotropic metamaterials for transformation electromagnetics
2014 / IEEE
By: Nagayama, T.; Sanada, A.;
Center wordline cell: A new symmetric layout cell for 64 Mb SRAM
1993 / IEEE / 0-7803-1450-6
By: Nagayama, T.; Fujita, S.; Tsukamoto, M.; Ichikawa, T.; Sasaki, M.; Mano, M.; Takizawa, M.; Naiki, I.; Kimura, T.;
Development of very bright LC projector
1996 / IEEE
By: Shikawa, S.; Maemura, Y.; Kuno, T.; Sugiura, H.; Yoshikawa, S.; Okuno, Y.; Asakawa, K.; Nagayama, T.; Inamura, M.; Someya, J.; Watabu, K.; Tamano, K.; Ishida, K.; Ishitani, H.;
Indium beam implantation
2000 / IEEE / 0-7803-6462-7
By: Hamamoto, W.; lshida, S.; Yamashita, T.; Fujisawa, H.; Nagayama, T.; Miyabayashi, K.; Miyamoto, N.;
Nissin 300 mm medium current ion implanter EXCEED2300
2000 / IEEE / 0-7803-6462-7
By: Iwasawa, K.; Yuasa, S.; Tamura, Y.; Nagai, N.; Matsumoto, T.; Nagayama, T.; Nakamura, M.; Nakaya, M.;
Performance of a plasma flood gun in the medium current ion implanter Exceed200OA
2000 / IEEE / 0-7803-6462-7
By: Ikejiri, T.; Sakai, S.; Tanjyo, M.; Nagayama, T.; Nakao, K.;
Versatile medium ion implanter EXCEED2300V
2002 / IEEE / 0-7803-7155-0
By: Sakai, S.; Hamamoto, N.; Ikejiri, T.; Naito, M.; Nagai, N.; Iwasawa, K.; Kinoyama, T.; Nagayama, T.; Nakamura, M.; Yamamoto, Y.; Kobayashi, T.; Miyabayashi, K.; Miyamoto, N.; Yamashita, T.; Nakaya, M.; Matsumoto, T.; Fujisawa, H.; Tanjyo, M.;
Cleaning procedure for indium implantation
2002 / IEEE / 0-7803-7155-0
By: Miyamoto, N.; Yamashita, T.; Nagayama, T.; Miyabayashi, K.;
Low energy implantation technology with molecular ion beam
2004 / IEEE / 0-7803-8511-X
By: Naito, M.; Sakai, S.; Nagayama, T.; Umisedo, S.; Nagai, N.; Tanjyo, M.; Nara, Y.; Hamamoto, N.; Aoyama, T.;
TIS & pupil transmittance distribution in measurement optics
2004 / IEEE / 4-99024720-5
By: Masada, T.; Nagayama, T.; Sugaya, A.;
Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation
2005 / IEEE / 4-9902158-6-9
By: Fukuda, M.; Aoyama, T.; Nagayama, T.; Tanjo, M.; Hamamoto, N.; Umisedo, S.; Nara, Y.;
High quality ion implanter; EXCEED3000AH-Nx for 45nm beyond I/I process<Beam Size and Angle>
2006 / IEEE / 1-4244-0047-3
By: Koga, Y.; Kobayashi, T.; Tanaka, K.; Ikejiri, T.; Sakai, S.; Tanjyo, M.; Nagai, N.; Naito, M.; Yuasa, S.; Umisedo, S.; Hamamoto, N.; Nagayama, T.; Yamashita, T.; Kibi, Y.; Nakaya, M.; Matsumoto, T.;
Advantageous Decaborane Ion Implantation for Ultra-shallow Junction of PMOSFETs Compared with Boron Monomer Implantation into Germanium Preamorphized Layer
2006 / IEEE / 1-4244-0047-3
By: Aoyama, T.; Tanjyo, M.; Nagayama, T.; Hamamoto, N.; Umisedo, S.;
Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy
2007 / IEEE
By: Kataoka, Y.; Suzuki, K.; Nagayama, T.; Buyuklimanli, T.H.; Magee, C.W.; Nagayama, S.;
Molecular Dopants and High Mass Dopants for HALO and Extension Implantation
2007 / IEEE / 1-4244-1103-3
By: Borland, J.; Mineji, A.; Nagayama, T.; Tanjyo, M.; Hane, M.; Shishiguchi, S.;
Development of Nissin new boron cluster ion implanter
2007 / IEEE / 1-4244-1103-3
By: Horsky, T.; Nagai, N.; Tanjyo, M.; Matsumoto, T.; Nagayama, T.; Jacobson, D.; Koga, Y.; Umisedo, S.; Hamamoto, N.; Glavish, H.;
Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation
2008 / IEEE
By: Kawamura, K.; Kataoka, Y.; Tada, Y.; Suzuki, K.; Nagayama, T.;
Cluster Ion Implantation for beyond 45nm node novel device applications
2008 / IEEE / 978-1-4244-1737-7
By: Tanjyo, M.; Nagayama, T.; Horsky, T.; Jacobson, D.; Krull, W.; Saker, K.; Ohji, Y.; Nara, Y.; Eimori, T.; Aoyama, T.; Kitajima, M.; Nakata, H.; Watanabe, T.; Shirai, K.; Katakami, A.; Ootsuka, F.; Nagai, N.; Matsumoto, T.; Maehara, N.; Koga, Y.; Umisedo, S.; Hamamoto, N.;
Development of external diagnosis for terminals in XLPE cables
2008 / IEEE / 978-1-4244-1621-9
By: Morishita, Y.; Suzuki, H.; Kazutoshi Abe; Saito, T.; Nagayama, T.; Kamibayashi, T.; Miyajima, K.;
Influence of Notch Shape and Size on Current-Driven Domain Wall Motions in a Magnetic Nanowire
2008 / IEEE
By: Komine, T.; Sugita, R.; Nagayama, T.; Murakami, H.;
Stress measurement of carbon cluster implanted layers with in-plane diffraction technique
2009 / IEEE / 978-1-4244-3319-3
By: Tanjyo, M.; Hada, M.; Ichiki, K.; Matsuo, J.; Ninomiya, S.; Nagayama, T.; Aoki, T.; Seki, T.;
Development of external diagnosis for terminal in XLPE cables
2009 / IEEE / 978-1-4244-5230-9
By: Watanabe, M.; Morishita, Y.; Onoda, H.; Abe, K.; Suzuki, H.; Nagayama, T.;
22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser annealing
2009 / IEEE / 978-1-4244-3814-3
By: Suguro, K.; Mizushima, I.; Itokawa, H.; Buyuklimanli, T.; Johnson, W.; Mirshad, I.; Borland, J.; Zelenko, J.; Muthukrishnan, S.; Nagayama, T.; Hamamoto, N.; Tanjyo, M.;
Carrier activation in cluster boron implanted Si
2010 / IEEE / 978-1-4244-5869-1
By: Nakashima, Y.; Hashimoto, M.; Maehara, N.; Kawamura, Y.; Umisedo, S.; Tanjyo, M.; Nagayama, T.; Hamamoto, N.; Onoda, H.; Prussin, S.; Reyes, J.; Kawakami, K.; Sezaki, S.; Yoshimi, H.;
Improvement of productivity by cluster ion implanter: CLARIS
2010 / IEEE / 978-1-4244-5869-1
By: Hamamoto, N.; Umisedo, S.; Tanjyo, M.; Jacobson, D.C.; Hahto, S.K.; Horsky, T.N.; Nagai, N.; Onoda, H.; Nagayama, T.; Hashimoto, M.; Nakashima, Y.; Hashino, Y.; Kawamura, Y.; Maehara, N.; Une, H.; Koga, Y.;
Suppression of phosphorus diffusion using cluster Carbon co-implantation
2010 / IEEE / 978-1-4244-5869-1
By: Yoshimi, H.; Sezaki, S.; Hashino, Y.; Nakashima, Y.; Kawamura, Y.; Maehara, N.; Koga, Y.; Umisedo, S.; Hamamoto, N.; Tanjyo, M.; Onoda, H.; Nagayama, T.; Hashimoto, M.; Nagai, N.;
Optimization of implant and anneal processes
2010 / IEEE / 978-1-4244-8401-0
By: Prussin, S.; Reyes, J.; Current, M.; Sezaki, S.; Yoshimi, H.; Nakashima, Y.; Maehara, N.; Koga, Y.; Hashimoto, M.; Kawamura, Y.; Umisedo, S.; Tanjyo, M.; Nagayama, T.; Hamamoto, N.; Onoda, H.;

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