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Author: Meikei Ieong

Results

Influence of hydrodynamic models on the prediction of submicrometer device characteristics
1997 / IEEE
By: Ting-Wei Tang; Meikei Ieong;
High performance of planar double gate MOSFETs with thin backgate dielectrics
2001 / IEEE / 0-7803-7014-7
By: Furukawa, T.; Leathen Shi; Roy, R.A.; Dokumaci, O.; Miller, R.J.; Meikei Ieong; Jones, E.C.; Kanarsky, T.; Wong, H.S.P.;
Examination of hole mobility in ultra-thin body SOI MOSFETs
2002 / IEEE / 0-7803-7462-2
By: Jones, E.C.; Roy, R.A.; Oldiges, P.; Kanarsky, T.; Dokumaci, O.; Doris, B.; Meikei Ieong; Solomon, P.M.; Zhibin Ren; Wong, H.-S.P.; Haensch, W.; Miller, R.J.;
Extreme scaling with ultra-thin Si channel MOSFETs
2002 / IEEE / 0-7803-7462-2
By: Leathen Shi; Natzle, W.; Zhibin Ren; Dokumaci, O.; Fen-Fen Jamin; Roy, R.A.; Ying Zhang; Kanarsky, T.; Meikei Ieong; Doris, B.; Haensch, W.; Wong, H.-S.P.; Miller, R.J.; Jones, E.C.; Gribelyuk, M.; Womack, S.; Mocuta, A.; Mezzapelle, J.; Hsiang-Jen Huang;
Extension and source/drain design for high-performance FinFET devices
2003 / IEEE
By: Meikei Ieong; Kedzierski, J.; Wong, H.-S.P.; Fried, D.; Nowak, E.; Boyd, D.; Roy, R.; Ying Zhang; Kanarsky, T.S.;
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
2003 / IEEE
By: Chan, K.K.; Boyd, D.C.; Gluschenkov, O.; Meikei Ieong; Gusev, E.P.; Kozlowski, P.M.; Min Yang; Chou, A.I.; Jamison, P.C.; Sicina, R.M.; D'Emic, C.P.;
Three dimensional CMOS devices and integrated circuits
2003 / IEEE / 0-7803-7842-3
By: Joshi, R.; Bernstein, K.; Chan, V.; Guarini, K.W.; Meikei Ieong; Haensch, W.; Kedzierski, J.;
Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate
2004 / IEEE
By: Babich, I.; D'Emic, C.; Kozlowski, P.; Kam-Leung Lee; Huiling Shang; Sikorski, E.; Guarini, K.; Haensch, W.; Wong, H.-S.P.; Meikei Ieong;
CMOS circuit performance enhancement by surface orientation optimization
2004 / IEEE
By: Meikei Ieong; Leland Chang; Min Yang;
Fabrication of metal gated FinFETs through complete gate silicidation with Ni
2004 / IEEE
By: Wong, H.-S.P.; Ying Zhang; Kanarsky, T.; Meikei Ieong; Kedzierski, J.;
Threshold voltage control in NiSi-gated MOSFETs through SIIS
2005 / IEEE
By: Kedzierski, J.; Meikei Ieong; Ott, J.A.; Kozlowski, P.M.; Boyd, D.; Ronsheim, P.; Cabral, C., Jr.; Zafar, S.;
Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS
2004 / IEEE / 0-7803-8684-1
By: Jamison, P.; Gusev, E.P.; Bedell, S.; Chu, J.O.; Huiling Shang; Ying Zhang; Guarini, K.W.; Meikei Ieong; Sadana, D.; Copel, M.; Ott, J.A.;
Scaling beyond conventional CMOS device
2004 / IEEE / 0-7803-8511-X
By: Dons, B.; Meikei Ieong; Huiling Shang; Min Yang; Ken Rim; Zhibin Ren; Kedzierski, J.;
Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
2005 / IEEE / 4-900784-00-1
By: Klymko, N.; Wildman, H.; Rovedo, N.; Fischetti, M.; Jinghong Li; Utomo, H.; Huajie Chen; Panda, S.; Holt, J.; Min Yang; Qiqing Ouyang; Chun-Yung Sung; Meikei Ieong; Ott, J.A.; Bryant, A.; Fried, D.M.; Costrini, G.; Kanarsky, T.;
Mobility and CMOS devices/circuits on sub-10nm [110] ultra thin body SOI
2005 / IEEE / 4-900784-00-1
By: Newbury, J.; Sikorski, E.; Shi, L.; Chan, K.; Kedzierski, J.; Ott, A.; Babich, K.; Chang, L.; Cai, J.; Sleight, J.; Topol, A.; Doris, B.; Rubino, J.; Huiling Shang; Meikei Ieong; Guarini, K.W.; Zhang, Y.; To, B.N.;
Characteristics of high performance PFETs with embedded SiGe source/drain and <100> channels on 45/spl deg/ rotated wafers
2005 / IEEE / 0-7803-9058-X
By: Rim, K.; Boyd, D.; Panda, S.; Fischetti, M.; Meikei Ieong; Qiqing Ouyang; Ott, J.A.;
Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI
2001 / IEEE / 2-914601-01-8
By: Ellis-Monaghan, J.; Yang, I.; Meikei Ieong; Kam-Leung Lee;
Strain for CMOS performance improvement
2005 / IEEE / 0-7803-9023-7
By: Ken Rim; Chan, V.; Qiqing; Min Yang; Young Way Teh; Rajeev Malik; Sam Yang; Meikei Ieong;
Hybrid-orientation technology (HOT): opportunities and challenges
2006 / IEEE
By: Min Yang; Meikei Ieong; Fischetti, M.V.; Burns, L.E.; Ott, J.A.; Chan, K.K.; Chan, V.W.C.; Chou, A.I.; Stathis, J.H.; Fried, D.M.; Shi, L.; Gusev, E.;
Strained SiGe/Ge Buried Channel pMOSFETs Design For High Performance Applications
2006 / IEEE / 0-7803-9748-7
By: Huiling Shang; Rim, K.; Xinlin Wang; Meikei Ieong; Oldiges, P.; Koester, S.;
Structure, Design and Process Control for Cu Bonded Interconnects in 3D Integrated Circuits
2006 / IEEE / 1-4244-0438-X
By: Tsang, C.K.; Andry, P.S.; Sang Hwui Lee; Kuan-Neng Chen; Haensch, W.; Topol, A.W.; Meikei Ieong; Young, A.M.; Jian-Qiang Lu; Yu-Ming Lin;
Nano-CMOS scaling: Novel devices and materials
2006 / IEEE / 978-1-4244-0540-4
By: Meikei Ieong;
Transistor-and Circuit-Design Optimization for Low-Power CMOS
2008 / IEEE
By: Meikei Ieong; Ken-Ichi Goto; Chih-Ping Chao; Chih-Sheng Chang; Mi-Chang Chang; Diaz, C.H.; Lee-Chung Lu;
IEDM executive committee
2010 / IEEE / 978-1-4244-7420-2
By: Meikei Ieong;

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