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Author: Maher, M.C.

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SEU and latchup tolerant advanced CMOS technology
1990 / IEEE
By: Pinkerton, S.D.; Crawford, K.B.; Koga, R.; Maher, M.C.; Hansel, S.J.; Penzin, S.H.; Lau, D.D.; Johnson, B.M.;
Radiation design test data for advanced CMOS product
1992 / IEEE / 0-7803-0930-8
By: Maher, M.C.;
Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions
1997 / IEEE
By: LaLumondiere, S.D.; Pinkerton, S.D.; Moss, S.C.; Crain, W.R.; Maher, M.C.; Penzin, S.H.; Koga, R.; Crawford, K.B.;
Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator
1999 / IEEE
By: Yang, L.; Emily, D.; Gehlhausen, M.; Titus, J.; Baker, P.; Cole, P.; Pease, R.L.; Turflinger, T.; Krieg, J.; Maher, M.C.; Schrimpf, R.; Barnaby, H.;
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response
1999 / IEEE
By: Gehlhausen, M.; Emily, D.; Titus, J.; Krieg, J.; Turflinger, T.; Cole, P.; Witczak, S.C.; Schrimpf, R.D.; Barnaby, H.J.; Pease, R.L.; van Nort, D.; Maher, M.C.;
Origins of total-dose response variability in linear bipolar microcircuits
2000 / IEEE
By: Cirba, C.R.; Barnaby, H.J.; Maher, M.C.; Krieg, J.F.; Turflinger, T.; Shaneyfelt, M.R.; Pease, R.L.; Fleetwood, D.M.; Schrimpf, R.D.;
Laser-induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators
2002 / IEEE
By: Koga, R.; LaLumondiere, S.D.; Moss, S.C.; Maher, M.C.; Yu, P.;
Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs
2002 / IEEE
By: Hjalmarson, H.P.; Banks, J.C.; Witczak, S.C.; Reber, C.A.; Dodd, P.E.; Riewe, L.C.; Fleetwood, D.M.; Hash, G.L.; Maher, M.C.; Schwank, J.R.; Pease, R.L.; Shaneyfelt, M.R.; Knapp, J.A.; Doyle, B.L.;
Total-dose hardening of a bipolar-voltage comparator
2002 / IEEE
By: Shaneyfelt, M.R.; Maher, M.C.; Pease, R.L.; Turflinger, T.L.; Krieg, J.; Baker, P.; Savage, M.W.;
Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices
2003 / IEEE
By: Riewe, L.C.; Dodd, P.E.; Gupta, S.; Schwank, J.R.; Maher, M.C.; Pease, R.L.; Shaneyfelt, M.R.;
Effect of passivation on the enhanced low dose rate sensitivity of National LM124 operational amplifiers
2004 / IEEE / 0-7803-8697-3
By: Seiler, J.E.; Shaneyfelt, M.R.; Maher, M.C.; Pease, R.L.; Dunham, G.W.; Platteter, D.G.;
Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity
2004 / IEEE
By: Shaneyfelt, M.R.; Schwank, J.R.; Fleetwood, D.M.; Maher, M.C.; Felix, J.A.; Dodd, P.E.; Pease, R.L.;
Investigation of millisecond-long analog single-event transients in the LM6144 op amp
2004 / IEEE
By: Massengill, L.W.; Boulghassoul, Y.; Pouget, V.; McMorrow, D.; Buchner, S.; Fouillat, P.; Maher, M.C.; Savage, M.; Howard, J.W.; Poivey, C.; Holman, W.T.;
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures
2004 / IEEE
By: Barnaby, H.J.; Seiler, J.E.; Dunham, G.W.; Platteter, D.G.; Schrimpf, R.D.; Pease, R.L.; Nowlin, R.N.; Maher, M.C.; Shaneyfelt, M.R.;
The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers
2005 / IEEE
By: Rowe, J.D.; Ball, D.R.; Boch, J.; Pease, R.L.; Shaneyfelt, M.R.; Maher, M.C.; Galloway, K.F.; Fleetwood, D.M.; Schrimpf, R.D.; Cizmarik, R.R.; Platteter, D.G.;
Elimination of Enhanced Low-Dose-Rate Sensitivity in Linear Bipolar Devices Using Silicon-Carbide Passivation
2006 / IEEE
By: Pease, R.L.; Schwank, J.R.; Camilletti, R.C.; Maher, M.C.; Shaneyfelt, M.R.; Dodd, P.E.; Russell, B.A.;

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