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Author: Lowry, T.
A designer friendly 45nm high performance technology with in-situ C-doped e-SiGe & dual stress liner in SRAM2008 / IEEE / 978-1-4244-1802-2
By: Khamankar, R.; Grider, T.; Shinn, G.; O'Brien, C.; Machala, C.; Blatchford, J.; Yu, S.; Riley, D.; Prins, S.; Olubuyide, O.; Montgomery, C.; Lowry, T.; Liu, L.; Lin, C.; Krishnan, A.; Kirmse, K.; Kirkpatrick, B.; Kim, T.; Hornung, B.; Gu, Y.; Fujii, I.; Corum, D.; Bu, H.; Bowen, C.;