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Author: Linholm, L.W.

Results

A machine-learning classification approach for IC manufacturing control based on test structure measurements
1989 / IEEE
By: Khera, D.; Zaghloul, M.E.; Reeve, C.P.; Linholm, L.W.;
A neural network approach for classifying test structure results
1989 / IEEE / 0-87942-714-0
By: Linholm, L.W.; Zaghoul, M.E.; Khera, D.; Wilson, C.L.;
Knowledge extraction techniques for expert system assisted wafer screening
1990 / IEEE
By: Buzzeo, J.; Ramanathan, G.; Linholm, L.W.; Cresswell, M.W.; Khera, D.; Nagarajan, A.;
Test structure data classification using a directed graph approach
1990 / IEEE
By: Linholm, L.W.; Khera, D.; Cresswell, M.W.; Schuster, C.E.;
A directed-graph classifier of semiconductor wafer-test patterns
1992 / IEEE
By: Linholm, L.W.; Khera, D.; Cresswell, M.W.; Schuster, C.E.;
A modified sliding wire potentiometer test structure for mapping nanometer-level distances
1990 / IEEE / 0-87942-588-1
By: Cresswell, M.W.; Linholm, L.W.; Allen, R.A.; Gaitan, M.;
Knowledge verification of machine-learning procedures based on test structure measurements
1990 / IEEE / 0-87942-588-1
By: Allen, R.A.; Linholm, L.W.; Khera, D.; Pina, C.; Hansford, W.; Tyree, V.C.; Cresswell, M.W.;
Voltage-dividing potentiometer enhancements for high-precision feature placement metrology
1992 / IEEE / 0-7803-0535-3
By: Linholm, L.W.; Ellenwood, C.H.; Cresswell, M.W.; Allen, R.A.;
Test structure for the in-plane locations of project features with nanometer-level accuracy traceable to a coordinate measurement system
1993 / IEEE / 0-7803-0857-3
By: Teague, E.C.; Penzes, W.B.; Ellenwood, C.H.; Linholm, L.W.; Allen, R.A.; Cresswell, M.W.;
Metrology standards for advanced semiconductor lithography referenced to atomic spacings and geometry
1993 / IEEE / 0-7803-0857-3
By: Jun, J.S.; Cresswell, M.W.; Linholm, L.W.; Teague, E.C.; Penzes, W.B.; Villarrubia, J.S.; Scire, F.E.; Kramar, J.A.;
Increasing profitability and improving semiconductor manufacturing throughput using expert systems
1994 / IEEE
By: Buzzeo, J.; Ramanathan, G.; Linholm, L.W.; Cresswell, M.W.; Khera, D.; Nagarajan, A.;
Application of the modified voltage-dividing potentiometer to overlay metrology in a CMOS/bulk process
1994 / IEEE / 0-7803-1757-2
By: Benecke, J.D.; Hill, T.A.; Ellenwood, C.H.; Owen, J.C., III; Volk, S.R.; Cresswell, M.W.; Allen, R.A.; Linholm, L.W.; Stewart, H.D.;
Test structures for determining design rules for microelectromechanical-based sensors and actuators
1994 / IEEE / 0-7803-1757-2
By: Zincke, C.; Linholm, L.W.; Zaghloul, M.E.; Gaitan, M.;
New test structure for nanometer-level overlay and feature-placement metrology
1994 / IEEE
By: Cresswell, M.W.; Teague, E.C.; Penzes, W.B.; Ellenwood, C.H.; Linholm, L.W.; Allen, R.A.;
A new method to measure the distance between graduation lines on graduated scales
1994 / IEEE / 0-7803-1880-3
By: Teague, E.C.; Linholm, L.W.; Cresswell, M.W.; Allen, R.A.; Penzes, W.B.;
The enhanced voltage-dividing potentiometer for high-precision feature placement metrology
1996 / IEEE
By: Linholm, L.W.; Ellenwood, C.H.; Cresswell, M.W.; Allen, R.A.;
Measurement of patterned film linewidth for interconnect characterization
1995 / IEEE / 0-7803-2065-4
By: Mayo, S.; Ghoshtagore, R.N.; Cresswell, M.W.; Allen, R.A.; Schafft, H.A.; Teague, E.C.; Linholm, L.W.; Kramar, J.A.;
Hybrid optical-electrical overlay test structure [for CMOS]
1996 / IEEE / 0-7803-2783-7
By: Allen, R.A.; Cresswell, M.W.; Gurnell, A.W.; Guthrie, W.F.; Linholm, L.W.;
Hybrid optical-electrical overlay test structure
1997 / IEEE
By: Allen, R.A.; Cresswell, M.W.; Gurnell, A.W.; Penzes, W.B.; Guthrie, W.F.; Linholm, L.W.;
Electrical linewidth test structures fabricated in mono-crystalline films for reference-material applications
1997 / IEEE / 0-7803-3243-1
By: Cresswell, M.W.; Linholm, L.W.; Guthrie, W.F.; Allen, R.A.; Ghoshtagore, R.N.; Sniegowski, J.J.;
Reference-length shortening by Kelvin voltage taps in linewidth test structures replicated in monocrystalline silicon films
1997 / IEEE / 0-7803-3243-1
By: Lee, W.E.; Linholm, L.W.; Sniegowski, J.J.; Allen, R.A.; Cresswell, M.W.; Guthrie, W.F.;
Electrical linewidth test structures fabricated in monocrystalline films for reference-material applications
1998 / IEEE
By: Allen, R.A.; Cresswell, M.W.; Linholm, L.W.; Ghoshtagore, R.N.; Sniegowski, J.J.; Guthrie, W.F.;
A Microelectronic Test Structure For Thickness Determination Of Homogeneous Conducting Thin Films In VLSI Processing
1988 / IEEE
By: Hanes, M.H.; Barley, B.L.; Linholm, L.W.; Kim, J.S.; Cresswell, M.W.;
A developmental expert system for test structure ata evaluation
1988 / IEEE
By: Linholm, L.W.; Cresswell, M.W.; Reeve, C.P.; Khera, D.;
CMOS Process Monitor
1988 / IEEE
By: Linholm, L.W.; Buehler, M.G.; Hicks, K.A.; Jennings, G.A.; Blaes, B.R.; Men, R.A.; Tyree, V.C.;
Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with non-planar geometries
1998 / IEEE / 0-7803-4348-4
By: Linholm, L.W.; Allen, R.A.; Guillaume, N.M.P.; Cresswell, M.W.; Guthrie, W.F.; Sullivan, N.; Osborne, Z.; Owen, J.C. III.; Ghoshtagore, R.N.;
Temperature dependence of the modulation of electrical linewidth of single-crystal critical dimension artifacts
1998 / IEEE / 0-7803-4348-4
By: Allen, R.; Linholm, L.W.; Cresswell, M.W.; Oyebanjo, O.;
Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films with nonplanar geometries
1999 / IEEE
By: Linholm, L.W.; Sullivan, N.; Osborne, Z.E.; Ghoshtagore, R.N.; Cresswell, M.W.; Allen, R.A.; Lee, W.E.; Guillaume, N.M.P.; Guthrie, W.F.;
Analysis of current flow in mono-crystalline electrical linewidth structures
1999 / IEEE / 0-7803-5270-X
By: Smith, S.; Gundlach, A.M.; Fallon, M.; Allen, R.A.; Lindsay, I.A.B.; Linholm, L.W.; Cresswell, M.W.; Walton, A.J.;
Sheet and line resistance of patterned SOI surface film CD reference materials as a function of substrate bias
1999 / IEEE / 0-7803-5270-X
By: Allen, R.A.; Cresswell, M.W.; Linholm, L.W.; Vogel, E.M.;
Comparison of sheet-resistance measurements obtained by standard and small-area four-point probing
1999 / IEEE / 0-7803-5270-X
By: Cresswell, M.W.; Guillaume, N.M.P.; Linholm, L.W.; Everist, S.; Allen, R.A.;
A new method to measure the distance between graduation lines on graduated scales
1999 / IEEE
By: Teague, E.C.; Linholm, L.W.; Cresswell, M.W.; Allen, R.A.; Penzes, W.B.;
Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards
2000 / IEEE / 0-7803-6275-7
By: Cresswell, M.W.; Linholm, L.W.; Everist, S.C.; Shea, P.J.; Guillaume, N.M.P.; Ghoshtagore, R.N.; Allen, R.A.;
A novel method for fabricating CD reference materials with 100 nm linewidths
2000 / IEEE / 0-7803-6275-7
By: Ellenwood, C.H.; Cresswell, M.W.; Linholm, L.W.; Allen, R.A.;
A new method to measure the distance between graduation lines on graduated scales
2000 / IEEE
By: Allen, R.A.; Penzes, W.B.; Teague, E.C.; Linholm, L.W.; Cresswell, M.W.;
High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials
2001 / IEEE
By: Cresswell, M.W.; Ghoshtagore, R.N.; Linholm, L.W.; Everist, S.C.; Headley, T.J.; Allen, R.A.;
Test chip for electrical linewidth of copper-interconnect features and related parameters
2001 / IEEE / 0-7803-6511-9
By: Linholm, L.W.; Gupta, A.; Richter, C.A.; Murabito, C.E.; Pachura, D.; Arora, N.; Cresswell, M.W.; Allen, R.A.; Bendix, P.;
Electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards
2001 / IEEE
By: Guillaume, N.M.P.; Allen, R.A.; Bonevich, J.E.; Cresswell, M.W.; Giannuzzi, L.A.; Linholm, L.W.; Shea, P.J.; Murabito, C.E.; Everist, S.C.;
An optimized output stage for MOS integrated circuits
1975 / IEEE
By: Linholm, L.W.;
Comments on "An optimized output stage for MOS integrated circuits" [with reply]
1975 / IEEE
By: Jaeger, R.C.; Linholm, L.W.;
Minimum test chip sample size selection for characterizing process parameters
1984 / IEEE
By: Kafadar, K.; Linholm, L.W.; Suehle, J.S.;
Measurement of the linewidth of electrical test-structure reference features by automated phase-contrast image analysis
2002 / IEEE / 0-7803-7464-9
By: Bogardus, E.H.; Cresswell, M.W.; am Ende, B.A.; Murabito, C.E.; Allen, R.A.; Linholm, L.W.; Guthrie, W.F.; Headley, T.J.;
Test structures for referencing electrical linewidth measurements to silicon lattice parameters using HRTEM
2002 / IEEE / 0-7803-7464-9
By: Ellenwood, C.H.; Linholm, L.W.; Guthrie, W.F.; Murabito, C.E.; Cresswell, M.W.; Allen, R.A.; Hal Bogardus, E.;
Junction-isolated electrical test structures for critical dimension calibration standards
2003 / IEEE / 0-7803-7653-6
By: Allen, R.A.; Linholm, L.W.; Cresswell, M.W.;
Test structures for referencing electrical linewidth measurements to silicon lattice parameters using HRTEM
2003 / IEEE
By: Guthrie, W.F.; Headley, T.J.; Cresswell, M.W.; Murabito, C.E.; Linholm, L.W.; am Ende, B.A.; Allen, R.A.; Bogardus, E.H.; Ellenwood, C.H.;
Noncontact critical dimension metrology sensor for chrome photomasks featuring a low-temperature co-fired ceramic technology
2004 / IEEE
By: Allen, R.A.; Guillaume, N.M.P.; Zaghloul, M.E.; Linholm, L.W.; Lahti, M.; Cresswell, M.W.;
Junction-isolated electrical test structures for critical dimension calibration standards
2004 / IEEE
By: Cresswell, M.W.; Allen, R.A.; Linholm, L.W.;
Recent developments in producing test-structures for use as critical dimension reference materials
2004 / IEEE / 0-7803-8262-5
By: Park, B.; Murabito, C.E.; Cresswell, M.W.; Patel, R.; Allen, R.A.; Linholm, L.W.; Edelstein, M.D.;
A direct measurement of interfacial contact resistance
1982 / IEEE
By: Linholm, L.W.; Proctor, S.J.;
Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity
1983 / IEEE
By: Linholm, L.W.; Proctor, S.J.; Mazer, J.A.;
Minimum test chip sample size selection for characterizing process parameters
1984 / IEEE
By: Linholm, L.W.; Suehle, J.S.; Kafadar, K.;
Comments on "Determining specific contact resistivity from contact end resistance measurements"
1984 / IEEE
By: Linholm, L.W.; Mazer, J.A.;

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