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Author: Jeong Yeon Won
Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability2007 / American Institute of Physics
By: Moonju Cho; Jeong Hwan Kim; Cheol Seong Hwang; Hyo-Shin Ahn; Seungwu Han; Jeong Yeon Won;
Improvements in the electrical properties of high-k HfO2 dielectric films on Si1xGex substrates by postdeposition annealing2007 / American Institute of Physics
By: Tae Joo Park; Jeong Hwan Kim; Jae Hyuk Jang; Minha Seo; Cheol Seong Hwang; Jeong Yeon Won;
Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1xGexSi substrates2008 / American Institute of Physics
By: Tae Joo Park; Jeong Hwan Kim; Jae Hyuck Jang; Kwang Duk Na; Cheol Seong Hwang; Jeong Yeon Won;
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors2006 / American Institute of Physics
By: Jaehoo Park; Tae Joo Park; Moonju Cho; Seong Keun Kim; Sug Hun Hong; Jeong Hwan Kim; Minha Seo; Cheol Seong Hwang; Jeong Yeon Won; Ranju Jeong; Jung-Hae Choi;