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Author: Jeff Huang
Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides2009 / American Institute of Physics
By: Han Zhao; Jeff Huang; Yen-Ting Chen; Jung Hwan Yum; Yanzhen Wang; Fei Zhou; Fei Xue; Jack C. Lee;
Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments2010 / American Institute of Physics
By: Aneesh Nainani; Jung Yum; Joel Barnett; Richard Hill; Niti Goel; Jeff Huang; Prashant Majhi; Raj Jammy; Krishna C. Saraswat;