Your Search Results
Use materials by this author in your textbook!
AcademicPub holds over eight million pieces of educational content such as case studies and journal articles for you to mix-and-match your way.
Experience the freedom of customizing your course pack with AcademicPub!Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.
Author: Jaehoo Park
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors2006 / American Institute of Physics
By: Jaehoo Park; Tae Joo Park; Moonju Cho; Seong Keun Kim; Sug Hun Hong; Jeong Hwan Kim; Minha Seo; Cheol Seong Hwang; Jeong Yeon Won; Ranju Jeong; Jung-Hae Choi;