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Author: Im, J.

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Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect
2012 / IEEE / 978-1-4673-1965-2
By: Seung-Hyun Chae; Yiwei Wang; Ho, P.S.; Im, J.; Tengfei Jiang; Bonifield, T.; Steinmann, P.; Mawatari, K.; Takahashi, Y.; Dunne, R.;
Measurement and analysis of thermal stresses in 3-D integrated structures containing through-silicon-vias
2012 / IEEE / 978-1-4673-1137-3
By: Rui Huang; Kwang-Yoo Byun; Ho-Young Son; Im, J.; Ho, P.S.; Suk-Kyu Ryu; Tengfei Jiang; Qiu Zhao;
Thermal stress characteristics and impact on device keep-out zone for 3-D ICs containing through-silicon-vias
2012 / IEEE / 978-1-4673-0847-2
By: Ho, P.S.; Rui Huang; Kwang-Yoo Byun; Ho-Young Son; Tengfei Jiang; Qiu Zhao; Suk-Kyu Ryu; Im, J.;
A Design of Reconfigurable Negative Group Delay Circuit Without External Resonators
2015 / IEEE
By: Im, J.; Jeong, Y.; Chaudhary, G.;
Forest Biomass and Carbon Stock Quantification Using Airborne LiDAR Data: A Case Study Over Huntington Wildlife Forest in the Adirondack Park
2014 / IEEE
By: Li, M.; Liu, T.; Quackenbush, L. J.; Im, J.;
Thermomechanical Failure Analysis of Through-Silicon Via Interface Using a Shear-Lag Model With Cohesive Zone
2014 / IEEE
By: Ho, P. S.; Im, J.; Jiang, T.; Ryu, S.-K.; Huang, R.;
High Growth Yield of Single Multiwall Carbon Nanotube With Different Length Effect
2014 / IEEE
By: Im, J.; Jang, J. E.; Cha, S. N.; Choi, Y.; Shin, J. H.; Kim, S.;
Development of adhesion promoters to enhance polymer/substrate interface toughness
1999 / IEEE / 0-930815-56-4
By: Im, J.; Meyers, G.; Shaffer, E.O., II; Curphy, J.; Buske, G.; Hetzner, J.; Stokich, T., Jr;
Underfill adhesion to Cyclotene/sup TM/ (BCB) dielectrics
1999 / IEEE / 0-930815-56-4
By: Wong, C.P.; Vincent, M.; Wu, J.; Hawn, D.; Garrou, P.; Meyers, G.; Im, J.; Scheck, D.;
High frequency/high density build-up boards with benzocyclobutene [BCB] polymer coated Cu foil
2000 / IEEE / 0-7803-5908-9
By: Matsui, K.; Shimoto, T.; Kohno, M.; Akimoto, H.; Shimada, Y.; Im, J.; So, Y.; Garrou, P.; Ohba, K.;
Development of a hybrid CVD/SOD integration sequence for reliable, high performance interconnect systems
2004 / IEEE / 0-7803-8312-5
By: Ohmoto, Y.; Cummings, S.; Waeterloos, J.; Rozeveld, S.; Beach, E.; Strittmatter, R.; Archer, L.; Mills, M.; Im, J.; Yang, K.; Lucero, S.; Stevens, R.;
Oxidation of the TA Diffusion Barrier and Its Effect on the Reliability of CU Interconnects
2006 / IEEE / 0-7803-9498-4
By: Smith, L.; Im, J.; Zhou, J.P.; Won-Chong Baek; Pfeifer, K.; Ho, P.S.; Oh-Jin Jung; Shang Kyun Park; Kyeong-Keun Choi; Sung Bo Hwang; Jeong Gun Lee;
Kinetic Analysis of Current Enhanced Intermetallic Growth and Its Effect on Electromigration Reliability of Solder Joints
2006 / IEEE / 0-7803-9498-4
By: Huang-Lin Chao; Ho, P.S.; Im, J.; Kuan-Hsun Lu; Xuefeng Zhang; Seung-Hyun Chae;
Simulation of Electrical and Mechanical Properties of Air-Bridge Cu Interconnects
2006 / IEEE / 0-7803-9498-4
By: Hyun Park; Ho, P.S.; Kastenmeier, B.; Im, J.; Kraatz, M.;
NiSi Polysilicon Fuse Reliability in 65nm Logic CMOS Technology
2006 / IEEE / 1-4244-0296-4
By: Boon Ang; Sunhom Paak; Im, J.; Tumakha, S.;
Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology
2006 / IEEE / 0-7803-9738-X
By: Sunhom Paak; Tumakha, S.; Boon Ang; Im, J.;
Environmental Effects on Dielectric Films in Plastic Encapsulated Silicon Devices
2007 / IEEE / 1-4244-0984-5
By: Brillhart, M.; Ahmad, M.; Jie Xue; Li Li; Lu, G.; Ho, P.S.; Im, J.; Zhiquan Luo;
Investigation of Intermetallic Compound Growth Enhanced by Electromigration in Pb-Free Solder Joints
2007 / IEEE / 1-4244-0984-5
By: Xuefeng Zhang; Chao, B.; Seung-Hyun Chae; Ho, P.S.; Im, J.;
NiSi Polysilicon Fuse Reliability in 65-nm Logic CMOS Technology
2007 / IEEE
By: Im, J.; Tumakha, S.; Boon Ang; Paak, S.S.;
Effects of UBM thickness, contact trace structure and solder joint scaling on electromigration reliability of Pb-free solder joints
2008 / IEEE / 978-1-4244-2230-2
By: Im, J.; Seung-Hyun Chae; Ho, P.S.; Uehling, T.;
Thermo-mechanical reliability of 3-D ICs containing through silicon vias
2009 / IEEE / 978-1-4244-4475-5
By: Suk-Kyu Ryu; Xuefeng Zhang; Lu, K.H.; Ho, P.S.; Rui Huang; Im, J.;
Plasma altered layer model for plasma damage characterization of porous OSG films
2009 / IEEE / 978-1-4244-4492-2
By: Im, J.; Bao, J.; Huang, H.; Shi, H.; Ho, P.S.; Armacost, M.; Kyser, D.; Pender, J.T.; Zhou, Y.;
Effects of cap layer and grain structure on electromigration reliability of Cu/low-k interconnects for 45 nm technology node
2010 / IEEE / 978-1-4244-5429-7
By: Zschech, E.; Hennesthal, C.; Aubel, O.; Ho, P.S.; Im, J.; Zhou, J.P.; Zhang, L.;
Reliability of Cu pillar bumps for flip-chip packages with ultra low-k dielectrics
2010 / IEEE / 978-1-4244-6412-8
By: Yiwei Wang; Ho, P.S.; Im, J.; Lu, K.H.;
Thermal stress induced delamination of through silicon vias in 3-D interconnects
2010 / IEEE / 978-1-4244-6412-8
By: Im, J.; Xuefeng Zhang; Qiu Zhao; Suk-Kyu Ryu; Lu, K.H.; Ho, P.S.; Rui Huang;
Minimization of plasma ashing damage to OSG low-k dielectrics
2010 / IEEE / 978-1-4244-7678-7
By: Kyser, D.; Armacost, M.; Pender, J.T.; Zhou, Y.; Shi, H.; Ho, P.S.; Im, J.; Huang, H.;
Cap layer and grain size effects on electromigration reliability in Cu/low-k interconnects
2010 / IEEE / 978-1-4244-7678-7
By: Aubel, O.; Kraatz, M.; Zhang, L.; Ho, P.S.; Zschech, E.; Im, J.; Hennesthal, C.;
Characterization of material properties of low temperature curing polymer dielectrics
2011 / IEEE / 978-1-61284-498-5
By: Butler, M.; Huffman, A.; Im, J.; Garrou, P.; Piascik, J.;
Effect of Sn grain structure on electromigration reliability of Pb-free solders
2011 / IEEE / 978-1-61284-498-5
By: Lu, K.H.; Yiwei Wang; Ho, P.S.; Im, J.; Shirley, D.; Stiborek, L.; Gupta, V.;
Temperature-dependent thermal stress determination for through-silicon-vias (TSVs) by combining bending beam technique with finite element analysis
2011 / IEEE / 978-1-61284-498-5
By: Im, J.; Hummler, K.; Qiu Zhao; Suk-Kyu Ryu; Lu, K.H.; Ho, P.S.; Rui Huang;

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