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Author: H. C. Floresca
Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric2007 / American Institute of Physics
By: Chang Yong Kang; Rino Choi; M. M. Hussain; Jinguo Wang; Young Jun Suh; H. C. Floresca; Moon J. Kim; Jiyoung Kim; Byoung Hun Lee; Raj Jammy;