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Author: Gluschenkov, O.

Results

W/WN/poly gate implementation for sub-130 nm vertical cell DRAM

2001 / IEEE / 4-89114-012-7
By: Divakaruni, R.; Bronner, G.; Strong, A.; Vollertsen, R.; Li, Y.; Kang, W.; Prakash, J.; Wong, K.; Bergner, W.; Ramachandran, R.; Naeem, M.; Yan, W.; Stojakovic, G.; Shafer, P.; Robl, W.; Gluschenkov, O.; McStay, I.; Clevenger, L.; Malik, R.;

A highly manufacturable 110 nm DRAM technology with 8F/sup 2/ vertical transistor cell for 1Gb and beyond

2002 / IEEE / 0-7803-7312-X
By: Akatsu, H.; Weis, R.; Cheng, K.; Seitz, M.; Kim, M.-S.; Ramachandran, R.; Dyer, T.; Kim, B.; Kim, D.-K.; Malik, R.; Strane, J.; Goebel, T.; Kwon, O.-J.; Sung, C.Y.; Parkinson, P.; Wilson, K.; McStay, I.; Chudzik, M.; Dobuzinsky, D.; Jacunski, M.; Ransom, C.; Settlemyer, K.; Economikos, L.; Simpson, A.; Knorr, A.; Naeem, M.; Stojakovic, G.; Robl, W.; Gluschenkov, O.; Liegl, B.; Wu, C.-H.; Wu, Q.; Li, W.-K.; Choi, C.J.; Arnold, N.; Joseph, T.; Varn, K.; Weybright, M.; McStay, K.; Kang, W.-T.; Li, Y.; Bukofsky, S.; Jammy, R.; Schutz, R.; Gutmann, A.; Bergner, W.; Divakaruni, R.; Back, D.; Crabbe, E.; Mueller, W.; Bronner, G.;

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

2003 / IEEE
By: Chan, K.K.; Boyd, D.C.; Gluschenkov, O.; Meikei Ieong; Gusev, E.P.; Kozlowski, P.M.; Min Yang; Chou, A.I.; Jamison, P.C.; Sicina, R.M.; D'Emic, C.P.;

Thermally robust dual-work function ALD-MN/sub x/ MOSFETs using conventional CMOS process flow

2004 / IEEE / 0-7803-8289-7
By: Park, D.-G.; Luo, Z.J.; Wann, C.H.; Sekiguchi, A.; Ng, H.; Rengarajan, R.; Jammy, R.; Wise, R.; Steegen, A.; Narayanan, V.; D'Emic, C.; Kozlowski, P.; Duch, E.; Kim, H.; Ku, V.; Mitchell, R.; Chakravarti, A.; Ronsheim, P.; Gluschenkov, O.; Bruley, J.; Chudzik, M.; Chou, A.; Lee, B.H.; Jamison, P.; Edleman, N.; Zhu, W.; Nguyen, P.; Wong, K.; Cabral, C.;

Design of high performance PFETs with strained si channel and laser anneal

2005 / IEEE / 0-7803-9268-X
By: Luo, Z.; Rim, K.; Ng, H.; Schepis, D.; Amos, R.; Mishra, S.; Lee, J.; Ajmera, A.; Lindsay, R.; Gluschenkov, O.; Turansky, A.; Madan, A.; Davis, R.; Li, J.; Chidambarrao, D.; Holt, J.; Sato, T.; Panda, S.; Greene, B.; Rovedo, N.; Kim, J.; Chong, Y.F.;

Ultra-Thin SOI CMOS Using Laser Spike Anneal

2006 / IEEE / 1-4244-0181-4
By: Ieong, M.; Sung, C.Y.; Lee, J.; Ronsheim, P.; Ott, J.; Lee, K.L.; Haensch, W.; Pan, J.; Black, L.; Dokumaci, O.; Gluschenkov, O.; Singh, D.V.; Hergenrother, J.M.; Sleight, J.; Ren, Z.;

High Performance 65nm SOI Transistors Using Laser Spike Annealing

2006 / IEEE / 1-4244-0301-4
By: Mocuta, A.C.; Ramachandran, R.; Kawamura, T.; Onishi, K.; Fried, D.; Narasimha, S.; Brown, D.; Sameer Jain; Miyamoto, K.; Freeman, G.; Deshpande, S.V.; Luning, S.; Shih-Fen Huang; Pellerin, J.; Kuroda, H.; Kluth, J.; Kimura, H.; Gluschenkov, O.; Fisher, P.A.; Yamashita, T.;

Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

2007 / IEEE / 978-4-900784-03-1
By: Chan, K.; Lavoie, C.; Dyer, T.; Byeong Kim; Chakravarti, A.; Ozcan, A.; Madan, A.; Jinghong Li; Gluschenkov, O.; Yaocheng Liu; Ken Rim; Henson, W.; Loesing, R.; Zhijiong Luo; Rovedo, N.; Pinto, T.; Popova, I.;

Impact of intra-die thermal variation on accurate MOSFET gate-length measurement

2009 / IEEE / 978-1-4244-3614-9
By: Schroder, D.K.; Ahsan, I.; Logan, R.; Zamdmer, N.; Gluschenkov, O.; Nowak, E.;

Electron holography for 2-D dopant profiling

2009 / IEEE / 978-1-4244-3319-3
By: Huiling Shang; Ronsheim, P.; Gluschenkov, O.; Jun Yuan; Gribelyuk, M.A.;

Reduction of RTA-driven intra-die variation via model-based layout optimization

2006 / IEEE / 978-1-4244-3308-7
By: Clougherty, F.; Mocuta, A.; Nowak, E.; Landis, H.; Goplen, B.; Gluschenkov, O.; Scott, J.C.; Chen, X.; Crabbe, E.; Divakaruni, R.; Hefferon, G.; Shang, H.; Li, Y.; Deshpande, S.; Ferris, J.; Chang, P.; Yu, J.; Chidambarrao, D.; Eller, M.; Lai, C.W.; Zamdmer, N.; Hook, T.;

Advanced junction formation for sub-32nm logic devices

2010 / IEEE / 978-1-4244-5869-1
By: Gluschenkov, O.; Eunha Kim; Wall, D.; Ozcan, A.; Deshpande, S.V.;

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