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Author: Elahy, M.

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Characteristics and Three-Dimensional Integration of MOSFET's in Small-Grain LPCVD Polycrystalline Silicon
1985 / IEEE
By: Sundaresan, R.; Chatterjiee, P.K.; Banerjee, S.K.; Shichijo, H.; Malhi, S.D.S.; Hon Wai Lam; Elahy, M.; Womack, R.H.; Hite, L.R.; Shah, A.H.; Richardson, W.F.; Pollack, G.P.;
A 4-Mbit DRAM with trench-transistor cell
1986 / IEEE
By: Wang, C.; Womack, R.H.; Shah, A.H.; Chatterjee, P.K.; Tran, B.; Pilch, C.J.; Malhi, S.D.S.; Bordelon, D.M.; Richardson, W.F.; Pollack, G.P.; Banerjee, S.K.; Elahy, M.; Davis, H.E.; Shichijo, H.; Gallia, J.D.;
A 4Mb DRAM with cross point trench transistor cell
1986 / IEEE
By: Shah, A.; Chu-Ping Wang; Chatterjee, P.; Bao Tran; Pilch, C.; Malhi, S.; Bordelon, D.; Richardson, W.; Pollack, G.; Banerjee, S.; Elahy, M.; Davis, H.; Shichijo, H.; Womack, R.; Gallia, J.;
VB-5 comparison of accumulation and inversion mode LPCVD polysilicon MOSFET characteristics for memory applications
1984 / IEEE
By: Banerjee, S.K.; Elahy, M.; Shichijo, H.; Pollack, G.P.; Richardson, W.F.; Malhi, S.D.S.; Shah, A.H.; Womack, R.H.; Lam, H.W.; Chatterjee, P.K.;
Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source
1984 / IEEE
By: Elahy, M.; Pollack, G.P.; Chatterjee, P.K.; Womack, R.; Shah, A.H.; Richardson, W.F.; Banerjee, S.; Shichijo, H.; Bonifield, T.; Malhi, S.D.S.;
Trench capacitor leakage in high-density DRAM's
1984 / IEEE
By: Banerjee, S.K.; Shah, A.H.; Chatterjee, P.K.; Shichijo, H.; Elahy, M.; Womack, R.H.;
Polysilicon transistors in VLSI MOS memories
1984 / IEEE
By: Shichijo, H.; Malhi, S.D.S.; Chatterjee, P.K.; Lam, H.W.; Womack, R.H.; Sundaresan, R.; Elahy, M.; Banerjee, S.K.; Hite, L.R.; Shah, A.H.; Pollack, G.P.; Richardson, W.F.;
Trench capacitor leakage in Mbit DRAMs
1984 / IEEE
By: Chatterjee, P.K.; Shichijo, H.; Elahy, M.; Womack, R.H.; Banerjee, S.K.; Shah, A.H.;
Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon
1985 / IEEE
By: Malhi, S.D.S.; Shichijo, H.; Lam, H.W.; Chatterjee, P.K.; Womack, R.H.; Banerjee, S.K.; Sundaresan, R.; Elahy, M.; Pollack, G.P.; Richardson, W.F.; Shah, A.H.; Hite, L.R.;
Properties of trench capacitors for high density DRAM applications
1985 / IEEE
By: Doering, R.R.; Baglee, D.A.; Armstrong, G.; Crank, S.; Clark, D.; Yashiro, M.; Elahy, M.;
A trench transistor cross-point DRAM cell
1985 / IEEE
By: Richardson, W.F.; Bordelon, D.M.; Chatterjee, P.K.; Davis, H.E.; Gallia, J.; Wang, C.-P.; Womack, R.H.; Elahy, M.; Banerjee, S.K.; Shichijo, H.; Malhi, S.D.S.; Shah, A.H.; Pollack, G.P.;
Trench transistor DRAM cell
1986 / IEEE
By: Shichijo, H.; Banerjee, S.K.; Chatterjee, P.K.; Shah, A.H.; Davis, H.E.; Gallia, J.; Wang, C.-P.; Elahy, M.; Womack, R.H.; Bordelon, D.M.; Richardson, W.F.; Pollack, G.P.; Malhi, S.D.S.;
Trench capacitor design issues in VLSI DRAM cells
1986 / IEEE
By: Elahy, M.; Rao, K.V.; Womack, R.H.; Richardson, W.F.; Tsai, H.L.; Banerjee, S.K.; Bordelon, D.M.;
Characterization of Trench Transistors for 3-D Memories
1986 / IEEE
By: Banerjee, S. K.; Shichujo, H.; Chatterjee, P. K.; Davis, H. E.; Gallia, J.; Wang, C. P.; Womack, R. H.; Elahy, M.; Malhi, S. D. S.; Bordelon, M.; Richardson, W. F.; Pollack, G. P.; Shah, A. H.; Nishimura, A.;

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