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Author: Dutton, R.W.

Results

Investigation on the Behavior of Stacked Devices Within Output Drivers Under ESD Conditions
2012 / IEEE
By: Dutton, R.W.; Kee-Won Kwon; Beebe, S.G.; Shuqing Cao; Jung-Hoon Chun; Gi-Doo Lee;
Improved MOSFET short-channel device using germanium implantation
1988 / IEEE
By: Law, M.E.; Pfiester, J.R.; Dutton, R.W.;
Current transport mechanisms in atomically abrupt metal-semiconductor interfaces
1988 / IEEE
By: Shenai, K.; Dutton, R.W.;
Low-field electron transport mechanism in GaAs MESFETs
1988 / IEEE
By: Dutton, R.W.; Shenai, K.;
Channel-buffer (substrate) interface phenomena in GaAs MESFETs fabricated by molecular-beam epitaxy
1988 / IEEE
By: Shenai, K.; Dutton, R.W.;
Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
1988 / IEEE
By: Dutton, R.W.; Law, M.E.;
The efficient simulation of coupled point defect and impurity diffusion
1988 / IEEE
By: Kump, M.R.; Dutton, R.W.;
Methodology for submicron device model development
1988 / IEEE
By: Marash, V.; Dutton, R.W.;
Algorithms for optimizing, two-dimensional symbolic layout compaction
1988 / IEEE
By: Mathews, R.G.; Wolf, W.H.; Dutton, R.W.; Newkirk, J.A.;
Hot carrier transport effect in Schottky-barrier diode grown by MBE
1988 / IEEE
By: Dutton, R.W.; Hwang, C.G.;
PISCES-MC: a multiwindow, multimethod 2-D device simulator
1988 / IEEE
By: Cheng, D.Y.; Dutton, R.W.; Hwang, C.G.;
Influence of device parameters on the switching speed of BiCMOS buffers
1989 / IEEE
By: Rosseel, G.P.; Dutton, R.W.;
Drain contact boundary specification in windowed Monte-Carlo device analysis
1988 / IEEE
By: Wu, K.; Cheng, D.Y.; Dutton, R.W.; Hwang, C.G.;
New approaches in a 3-D one-carrier device solver
1989 / IEEE
By: Dutton, R.W.; Wang, Z.-Y.; Lucas, R.F.; Wu, K.-C.;
Improvement in norm-reducing Newton methods for circuit simulation
1989 / IEEE
By: Yeager, H.R.; Dutton, R.W.;
Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation
1989 / IEEE
By: Hwang, C.G.; Dutton, R.W.;
Substrate current model for submicrometer MOSFETs based on mean free path analysis
1989 / IEEE
By: Hwang, C.G.; Dutton, R.W.;
Two-dimensional analysis of a merged BiPMOS device
1989 / IEEE
By: Dutton, R.W.; Rosseel, G.P.; Kuo, J.B.;
Picosecond GaAs photoconductors on silicon substrates for local integration with silicon devices and circuits
1989 / IEEE
By: Dutton, R.W.; Anderson, G.D.; Mariella, R.; Morse, J.D.;
The effect of implantation damage on arsenic/phosphorus codiffusion
1988 / IEEE
By: Dutton, R.W.; Pfiester, J.R.; Law, M.E.;
Two-dimensional transient analysis of a collector-up ECL inverter
1989 / IEEE
By: Wooley, B.A.; Dutton, R.W.; Yang, T.S.; Kuo, J.B.;
Modeling of the distributed gate RC effect in MOSFET's
1989 / IEEE
By: Kim, L.-S.; Dutton, R.W.;
A single-ended BiCMOS sense circuit for digital circuits
1989 / IEEE
By: Horowitz, M.A.; Rosseel, G.O.; Cline, R.L.; Dutton, R.W.;
Delay analysis for BiCMOS drivers
1988 / IEEE
By: Pederson, D.O.; Mayaram, K.; Dutton, R.W.; Rosseel, G.P.;
Numerical analysis of breakdown voltage using quasi three dimensional device simulation
1990 / IEEE
By: Dutton, R.W.; Suzumura, M.; Hwang, C.G.; Yabuta, A.;
'Defensive programming' in the rapid development of a parallel scientific program
1990 / IEEE
By: Dutton, R.W.; Deutsch, J.T.; Cheng, D.Y.;
Metastability of CMOS latch/flip-flop
1990 / IEEE
By: Kim, L.-S.; Dutton, R.W.;
A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures
1990 / IEEE
By: Takano, C.; Dutton, R.W.; Yu, Z.;
Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate
1990 / IEEE
By: Deal, M.D.; Dutton, R.W.; Liu, Y.;
Turn-on transient analysis of a BiPMOS device
1989 / IEEE
By: Dutton, R.W.; Rosseel, G.P.; Kuo, J.B.;
Picosecond photoconductivity using a graded bandgap Al/sub x/Ga/sub 1-x/As active detecting layer
1989 / IEEE / 0-7803-0817-4
By: Dutton, R.W.; Mariella, R.P.; Morse, J.D.;
Scaling rules for bipolar transistors in BiCMOS circuits
1989 / IEEE / 0-7803-0817-4
By: Dutton, R.W.; Rosseel, G.P.;
Modeling capture, emission, and impact ionization of deep-level traps for Ga-As semi-insulating substrates
1991 / IEEE
By: Dutton, R.W.; Li, Q.;
A manufacturing-oriented environment for synthesis of fabrication processes
1989 / IEEE / 0-8186-1986-4
By: Iwai, H.; Wenstrand, J.S.; Dutton, R.W.;
Numerical small-signal AC modeling of deep-level-trap related frequency-dependent output conductance and capacitance for GaAs MESFET's on semi-insulating substrates
1991 / IEEE
By: Dutton, R.W.; Li, Q.;
A STRIDE towards practical 3-D device simulation-numerical and visualization considerations
1991 / IEEE
By: Wu, K.-C.; Chin, G.R.; Dutton, R.W.;
Picosecond optoelectronic gating of silicon bipolar transistors by locally integrated GaAs photoconductive devices
1991 / IEEE
By: Morse, J.D.; Dutton, R.W.; Anderson, G.D.; Mariella, R.P., Jr.;
Comments, with reply, on 'Metastability of CMOS latch/flip-flop'
1992 / IEEE
By: Molnar, C.E.; Rosenberger, F.U.; Dutton, R.W.;
A tool towards integration of IC process, device, and circuit simulation
1992 / IEEE
By: Chin, G.; Dutton, R.W.;
A utility-based integrated system for process simulation
1992 / IEEE
By: Scheckler, E.W.; Wong, A.S.; Wang, R.K.; Chin, G.; Camagna, J.R.; Neureuther, A.R.; Dutton, R.W.;
An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects
1992 / IEEE
By: Dutton, R.W.; Shu, C.-W.; Ravaioli, U.; Kan, E.C.; Chen, D.;
Schottky contact effects in the sidegating effect of GaAs devices
1992 / IEEE
By: Liu, Y.; Deal, M.D.; Dutton, R.W.;
Device CAD in the '90s: at the crossroads
1992 / IEEE
By: Dutton, R.W.; Goossens, R.J.G.;
Modeling and simulation of high-level injection behavior in double heterojunction bipolar transistors
1990 / IEEE
By: Dutton, R.W.; Cottrell, P.E.; Yu, Z.;
An approach to construct pre-conditioning matrices for block iteration of linear equations
1992 / IEEE
By: Wu, K.-C.; Wang, Z.-Y.; Dutton, R.W.;
Comments, with reply, on 'Schottky contact effects in the sidegating effect of GaAs devices'
1992 / IEEE
By: Dutton, R.W.; Yi Liu; Ayyar, S.G.; Deal, M.D.;
Accurate modeling and numerical techniques in simulation of impact-ionization effects on BJT characteristics
1991 / IEEE / 0-7803-0243-5
By: Yu, Z.; Oh, S.-Y.; Vande Voorde, P.; Dutton, R.W.; Goossens, R.J.G.; Chen, D.;
1 GHz integrated poly-Si and -SiGe photoconductors with BiCMOS compatibility
1991 / IEEE / 0-7803-0243-5
By: Hai, A.; Dutton, R.W.; Morse, J.D.;
On-chip picosecond time-domain measurement of silicon bipolar transistor characteristics using integrated GaAs photoconductive devices
1991 / IEEE / 0-7803-0243-5
By: Mariella, R.P., Jr.; Morse, J.D.; Dutton, R.W.; Anderson, G.D.;
Modeling of bias-stress dependent transconductance degradation of submicron MOSFETs
1990 / IEEE
By: Yu, Z.; Sugino, S.; Dutton, R.W.; Venturi, F.;
Modeling of the charge balance condition on floating gates and simulation of EEPROMs
1993 / IEEE
By: Sugino, S.; Chen, D.; Dutton, R.W.; Yu, Z.;
An automatic biasing scheme for tracing arbitrarily shaped I-V curves
1994 / IEEE
By: Beebe, S.; Goossens, R.J.G.; Dutton, R.W.; Zhiping Yu;
Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs
1989 / IEEE
By: Higman, J.M.; Dutton, R.W.; Hwang, C.G.; Hess, K.;
Robust and efficient AC analysis of high-speed devices
1992 / IEEE / 0-7803-0817-4
By: So, L.; Zhiping Yu; Ke-Chih Wu; Sato-Iwanaga, J.; Dutton, R.W.;
Impact ionization modeling using simulation of high energy tail distributions
1994 / IEEE
By: Hong-Shick Min; Young-June Park; Chiang-Sheng Yao; Jae-Gyung Ahn; Dutton, R.W.;
Grid evolution for oxidation simulation using a quadtree based grid generator
1994 / IEEE / 0-7803-1867-6
By: Dutton, R.W.; McKenna, E.W.; Sahul, Z.H.;
Further improvements in decoupled methods for semiconductor device modeling
1994 / IEEE / 0-7803-1867-6
By: Heasell, E.L.; Obrecht, M.S.; Dutton, R.W.; Wu, K.-C.; Elmasry, M.I.;
Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering
1994 / IEEE / 0-7803-1867-6
By: Dutton, R.W.; Mujtaba, S.A.; Scharfetter, D.L.;
Formulation of a tail electron hydrodynamic model based on Monte Carlo results
1995 / IEEE
By: Hong-Shick Min; Young-June Park; Jae-Gyung Ahn; Chiang-Sheng Yao; Dutton, R.W.;
Accurate modeling of GaAs MESFET sidegating effects by trapping simulation
1994 / IEEE / 0-7803-2111-1
By: Dutton, R.W.; Zhiping Yu; Yi Liu; Deal, M.D.;
Next generation Stanford TCAD-PISCES 2ET and SUPREM 007
1994 / IEEE / 0-7803-2111-1
By: McKenna, G.; Yergeau, D.; Sahul, Z.; Rotella, F.; Beebe, S.; So, L.; McVittie, J.; Dutton, R.W.; Kan, E.; Wu, K.C.; Yu, Z.;
Layout-based extraction of IC electrical behavior models
1994 / IEEE / 0-7803-2111-1
By: Yu, Z.; Lee, A.; Yang, D.; Chen, T.; Knepper, R.W.; Wang, K.; Dutton, R.W.; Rotella, F.; Watt, J.;
Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect
1995 / IEEE
By: Chenming Hu; Hong-Shick Min; Young-June Park; Assaderaghi, F.; Woo-Sung Choi; Dutton, R.W.;
Parallelizing a PDE solver: experiences with PISCES-MP
1995 / IEEE / 0-8186-7038-X
By: Herndon, B.P.; Dutton, R.W.; Raefsky, A.;
Quasi-three-dimensional modeling of sub-micron LOCOS structures
1995 / IEEE
By: Park, H.; Hojung Hwang; Dutton, R.W.; Saraswat, K.C.; Sahul, Z.H.; Smeys, P.;
Relaxation-based harmonic balance technique for semiconductor device simulation
1995 / IEEE / 0-8186-7213-7
By: Dutton, R.W.; So, L.; Zhiping Yu; Troyanovsky, B.;
Hot electron transistors on silicon substrate (HESS)-a computational prototyping
1995 / IEEE / 0-7803-2442-0
By: Dutton, R.W.; Gyo-Young Jin; Kan, E.C.;
Heterogeneous process simulation tool integration
1996 / IEEE
By: Ze-Kai Hsiau; Wang, K.C.; Sahul, Z.H.; Dutton, R.W.; McKenna, E.W.;
TCAD for analog circuit applications: virtual devices and instruments
1996 / IEEE / 0-7803-3136-2
By: Amborg, T.; Tao Chen; Wang, K.; Kan, E.C.; Zhiping Yu; Troyanovsky, B.; Dutton, R.W.;
Physical etching/deposition simulation with collision-free boundary movement
1995 / IEEE / 0-7803-2700-4
By: McVittie, J.P.; Kan, E.C.; Hsiau, Z.; Dutton, R.W.;
Dynamic trapping model for analysis of GaAs MESFETs and quantum well lasers
1995 / IEEE / 0-7803-3062-5
By: Dutton, R.W.; Zhiping Yu; Yi Liu; Harrison, W.A.;
Parasitic characterization of radio-frequency (RF) circuits using mixed-mode simulation
1996 / IEEE / 0-7803-3117-6
By: Dutton, R.W.; So, L.; Kan, E.C.; Jaejune Jang;
Virtual instruments for development of high performance circuit technologies
1995 / IEEE / 0-7803-2584-2
By: Beebe, S.; Rotella, F.; Yu, Z.; Dutton, R.W.; So, L.; Troyanovsky, B.;
Layout-based 3D solid modeling for IC
1995 / IEEE / 0-7803-2773-X
By: Watt, J.T.; Dutton, R.W.; Tao Chen; Wang, K.; Zhiping Yu;
Physical modeling of surface and heterojunction for mesa-structured HBTs
1995 / IEEE / 0-7803-2966-X
By: Kan, E.C.; Dutton, R.W.;
Simulation of the hydrodynamic device model on distributed memory parallel computers
1996 / IEEE
By: Dutton, R.W.; Law, K.H.; Aluru, N.R.;
Distortion analysis of GaAs MESFETs based on physical model using PISCES-HB
1996 / IEEE / 0-7803-3393-4
By: Fujimoto, K.; Sato-Iwanaga, J.; Dutton, R.W.; Yu, Z.; Troyanovsky, B.; Inoue, K.; Ota, Y.; Masato, H.;
Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs
1996 / IEEE / 0-7803-3393-4
By: Voorde, P.V.; Griffin, P.B.; Yu, Z.; Oh, S.-Y.; Dutton, R.W.;
Nonlinear dynamic modeling of micromachined microwave switches
1997 / IEEE / 0-7803-3814-6
By: Dutton, R.W.; Kan, E.C.; Chan, E.K.; Pinsky, P.M.;
Density-gradient simulations of quantum effects in ultra-thin-oxide MOS structures
1997 / IEEE / 0-7803-3775-1
By: Lee, W.-C.; Yu, Z.; Ancona, M.G.; Voorde, P.V.; Dutton, R.W.;
A computationally stable quasi-empirical compact model for the simulation of MOS breakdown in ESD-protection circuit design
1997 / IEEE / 0-7803-3775-1
By: Dutton, R.W.; Beebe, S.; Zhipeng Yu; Xin Yi Zhang; Shiang Liang Lim;
A new numerical formulation for thermal oxidation
1997 / IEEE / 0-7803-3775-1
By: Dutton, R.W.; Kan, E.; Hughes, T.J.R.; Rao, V.S.;
Gridding techniques for the level set method in semiconductor process and device simulation
1997 / IEEE / 0-7803-3775-1
By: Kan, E.C.; Dutton, R.W.; Rao, V.; Ze-Kai Hsiau;
Robust, stable, and accurate boundary movement for physical etching and deposition simulation
1997 / IEEE
By: Dutton, R.W.; McVittie, J.P.; Kan, E.C.; Ze-Kai Hsiau;
Improved performance and thermal stability of interdigitated power RF bipolar transistors with nonlinear base ballasting
1997 / IEEE / 0-7803-3916-9
By: Dutton, R.W.; Kan, E.C.; Jaejune Jang; Arnborg, T.;
Device simulation for RF applications
1997 / IEEE / 0-7803-4100-7
By: Rotella, F.; Arnborg, T.; Yu, Z.; Troyanovsky, B.; Dutton, R.W.; Sato-Iwanaga, J.; Ma, G.;
Analysis of Writing and Erasing Procedure of Flotox EEPROM Using the New Charge Balance Condition (CBC) Model
1992 / IEEE / 0-7803-0516-7
By: Sugino, S.; Dutton, R.W.; Datong Chen; Takakura, N.;
Analysis of Spurious Velocity Overshoot in Hydrodynamic Simulations
1992 / IEEE / 0-7803-0516-7
By: Pinto, M.R.; Sangiorgi, E.; Datong Chen; Dutton, R.W.; Ravaioli, U.; Kn, E.C.;
Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting
1998 / IEEE
By: Arnborg, T.; Kan, E.C.; Jaejune Jang; Dutton, R.W.; Johansson, T.;
Algorithms And TCAD Software Using Parallel Computation
1993 / IEEE / 0-7803-1338-0
By: Dutton, R.W.;
Robust Simulation Of GaAs Devices Using Energy Transport Model
1993 / IEEE / 0-7803-1338-0
By: So, L.L.; Dutton, R.W.; Zhiping Yu; Datong Chen;
An Efficient Impact Ionization Model For Silicon Monte Carlo Simulation
1993 / IEEE / 0-7803-1338-0
By: Dutton, R.W.; Chen, D.; Yao, C.-S.; Abramo, A.; Sangiorgi, E.; Venturi, F.;
/spl delta/-zone Triangulation: A Boundary Refinement scheme for quadtree based mesh
1993 / IEEE / 0-7803-1338-0
By: Dutton, R.W.; Yang, D.; Law, K.H.;
Solid Modeling-based Parametric Operations For Device Design
1993 / IEEE / 0-7803-1338-0
By: Wong, W.T.; Plummer, J.D.; Dutton, R.W.; Yang, D.X.;
A Charge-oriented Model For MOS Transistor Capacitances
1977 / IEEE
By: Dutton, R.W.; Ward, D.E.;
Circuit/device modeling at the quantum level
1998 / IEEE / 0-7803-4369-7
By: Kiehl, R.A.; Dutton, R.W.; Zhiping Yu;
Level set methods and MR image segmentation for geometric modeling in computational hemodynamics
1998 / IEEE / 0-7803-5164-9
By: Wang, K.C.; Dutton, R.W.; Parker, D.; Hsiau, Z.; Taylor, C.A.;
A fast 3D modeling approach to parasitics extraction of bonding wires for RF circuits
1998 / IEEE / 0-7803-4774-9
By: Yue, C.P.; Xiaoning Qi; Sakai, H.; Dutton, R.W.; Zhiping Yu; Soh, H.T.; Amborg, T.;
Intelligent Simulation for OPtimization of Fabrication Processes
1990 / IEEE
By: Norishima, M.; Iwai, H.; Wenstrand, J.S.; Dutton, R.W.; Wada, T.; Tanimoto, H.;
A STRIDE Towards Practical 3D Device Simulation - Computational and Visualization Considerations
1990 / IEEE
By: Dutton, R.W.; Ke-chih Wu; Goodwin Chin;

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