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Author: Delabie, A.

Results

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

2012 / IEEE
By: Decoutere, S.; Bahl, S.R.; Boulay, S.; Van Hove, M.; Stoffels, S.; Delabie, A.; Geens, K.; Wellekens, D.; Xuanwu Kang;

High-Performance Ge MOS Capacitors by $\hbox{O}_{2}$ Plasma Passivation and $\hbox{O}_{2}$ Ambient Annealing

2011 / IEEE
By: Delabie, A.; Caymax, M.; Shaoren Deng; Lin, D.; Schaekers, M.; Yulong Jiang; Qi Xie; Detavernier, C.; Deduytsche, D.; Xinping Qu;

Physical characterization of ultrathin high k dielectrics

2003 / IEEE / 0-7803-7747-8
By: Vandervorst, W.; Brijs, B.; Bender, H.; Conard, O.T.; Petry, J.; Richard, O.; Van Elshocht, S.; Delabie, A.; Caymax, M.; De Gendt, S.; Cosnier, V.; Green, M.; Chen, J.;

Implementation of high-k gate dielectrics - a status update

2003 / IEEE / 4-89114-037-2
By: De Gendt, S.; Chen, J.; Heyns, M.; Zhao, C.; Young, E.; Witters, T.; Van Elshocht, S.; Rohr, E.; Tsai, W.; Shimamoto, Y.; Schram, T.; Ragnarsson, L.; Puurunen, R.; Pantisano, L.; Niwa, M.; Maes, J.W.; Kubicek, S.; Kerber, A.; Kaushik, V.; Deweerd, W.; Delabie, A.; Conard, T.; Claes, M.; Caymax, M.; Cartier, E.; Carter, R.;

Effects of interactions between HfO₂ and poly-Si on MOSCAP and MOSFET electrical behavior

2003 / IEEE / 4-89114-037-2
By: Heyns, M.; Manabe, Y.; Witters, T.; Ragnarsson, L.-A.; Shimamoto, Y.; Shi, X.; Kaushik, V.S.; Claes, M.; Van Elshocht, S.; Delabie, A.; De Gendt, S.; Rohr, E.;

Scaling of high-k dielectrics towards sub-1nm EOT

2003 / IEEE / 0-7803-7765-6
By: Heyns, M.; Beckx, S.; Bender, H.; Blomme, P.; Boullart, W.; Brijs, B.; Carter, R.; Caymax, M.; Claes, M.; Conard, T.; De Gendt, S.; Degraeve, R.; Delabie, A.; Deweerdt, W.; Groeseneken, G.; Henson, K.; Kauerauf, T.; Kubicek, S.; Lucci, L.; Lujan, G.; Mentens, J.; Pantisano, L.; Petry, J.; Richard, O.; Rohr, E.; Schram, T.; Vandervorst, W.; Van Doorne, P.; Van Elshocht, S.; Westlinder, J.; Witters, T.; Zhao, C.; Cartier, E.; Chen, J.; Cosnier, V.; Green, M.; Jang, S.E.; Kaushik, V.; Kerber, A.; Kluth, J.; Lin, S.; Tsai, W.; Young, E.; Manabe, Y.; Shimamoto, Y.; Bajolet, P.; De Witte, H.; Maes, J.W.; Date, L.; Pique, D.; Coenegrachts, B.; Vertommen, J.; Passefort, S.;

Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line

2004 / IEEE / 0-7803-8478-4
By: De Jaeger, B.; Heyns, M.; Satta, A.; Kubicek, S.; Verheyen, P.; Van Steenbergen, J.; Croon, J.; Kaczer, B.; Van Elshocht, S.; Delabie, A.; Kunnen, E.; Sleeckx, E.; Teerlinck, I.; Lindsay, R.; Schram, T.; Chiarella, T.; Degraeve, R.; Conard, T.; Poortmans, J.; Winderickx, G.; Boullart, W.; Schaekers, M.; Mertens, P.W.; Caymax, M.; Vandervorst, W.; Van Moorhem, E.; Biesemans, S.; De Meyer, K.; Ragnarsson, L.; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.-L.; Afanas'ev, V.; Stesmans, A.; Meuris, M.; Houssa, M.;

High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions

2005 / IEEE / 4-900784-00-1
By: Severi, S.; Ragnarsson, L.A.; Heyns, M.; De Gendt, S.; De Meyer, K.; Brunco, D.P.; Trojmanm L; Tsai, W.; Schram, T.; Delabie, A.; Johnson, K.D.; Groeseneken, G.;

Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions

2006 / IEEE
By: Kauerauf, T.; Degraeve, R.; Aoulaiche, M.; Brunco, D.P.; Johnson, K.D.; Trojman, L.; Severi, S.; Ragnarsson, L.-A.; Heyns, M.; Kristin De Meyer; Groeseneken, G.; Houssa, M.; Tsai, W.; De Gendt, S.; Kaushik, V.S.; Delabie, A.;

Estimation of fixed charge densities in hafnium-silicate gate dielectrics

2006 / IEEE
By: O'Sullivan, B.J.; Kaushik, V.S.; Heyns, M.; De Gendt, S.; Ragnarsson, L.-A.; Rohr, E.; Pourtois, G.; Pantisano, L.; Schram, T.; Deweerd, W.; Van Elshocht, S.; Delabie, A.; Van Hoornick, N.;

Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ Layers

2007 / IEEE
By: Moonju Cho; Degraeve, R.; Pourtois, G.; Delabie, A.; Cheol Seong Hwang; Kauerauf, T.; Groeseneken, G.; De Gendt, S.; Heyns, M.; Ragnarsson, L.-A.;

A Novel CMP-Less Integration Scheme For Dual Work Function Ni-FUSI CMOS

2006 / IEEE / 1-4244-0438-X
By: Kubicek, S.; de Marneffe, J.-F.; Biesemans, S.; Jurczak, M.; Kittl, J.A.; Lauwers, A.; Hoffman, T.; Absil, P.P.; Veloso, A.; Delabie, A.; Eyckens, B.; Mertens, S.; Kerner, C.; Chiarella, T.; Vrancken, C.;

Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

2007 / IEEE
By: Ragnarsson, L.-A.; Biesemans, S.; De Gendt, S.; Schram, T.; Swerts, J.; Hong Yu Yu; Delabie, A.; Kai Min Yin; Conard, T.; Hag-Ju Cho; Chang, V.S.;

The Application of an Ultrathin ALD HfSiON Cap Layer on SiON Dielectrics for Ni-FUSI CMOS Technology Targeting at Low-Power Applications

2007 / IEEE
By: Hoffmann, T.; Veloso, A.; Yu, H.Y.; Chang, S.Z.; Biesemans, S.; Lauwers, A.; Absil, P.; Kerner, C.; Everaert, J-L.; Delabie, A.;

Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

2007 / IEEE / 1-4244-0652-8
By: Blomberg, T.; Maes, J.W.; Swerts, J.; Wilk, G.; Shero, E.; Delabie, A.; Fourmun Lee; Deloffre, E.; Marcus, S.; Gros-Jean, M.;

Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate

2007 / IEEE / 1-4244-0756-7
By: Swerts, J.; Lehnen, P.; Singanamalla, R.; Rohr, E.; Adelmann, C.; Delabie, A.; Witters, T.; Van Elshocht, S.; Chang, S.-Z.; Akheyar, A.; Mitsuhashi, R.; Kubicek, S.; O'Sullivan, B.J.; Schram, T.; Chang, V.S.; Ragnarsson, L.-A.; Yu, H.Y.; Cho, H.-J.; Biesemans, S.; Absil, P.P.; De Gendt, S.;

Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal

2007 / IEEE / 978-1-4244-1507-6
By: Biesemans, S.; Hoffmann, T.; Absil, P.; De Gendt, S.; De Meyer, K.; Van Elshocht, S.; Delabie, A.; Kerner, C.; Chiarella, T.; O'Sullivan, B.J.; Hooker, J.C.; Cho, H.-J.; Akheyar, A.; Mitsuhashi, R.; Chang, V.S.; Vrancken, C.; Brus, S.; Rohr, E.; Kauerauf, T.; Singanamalla, R.; Veloso, A.; Yu, H.; Ragnarsson, L.-A.; Nyns, L.; Witters, T.; Adelmann, C.; Demand, M.; Vos, R.; Paraschiv, V.; Schram, T.; Kubicek, S.;

A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack

2007 / IEEE / 978-1-4244-1507-6
By: O'Connor, R.; Rohr, E.; Pourtois, G.; Ragnarsson, L.-A.; Chang, V.S.; Biesemans, S.; Absil, P.P.; De Gendt, S.; Schram, T.; Kubicek, S.; Lehnen, P.; Adelmann, C.; Pantisano, L.; O'Sullivan, B.J.; Witters, T.; Mitsuhashi, R.; Akheyar, A.; Cho, H.-J.; Conard, T.; Van der Heyden, N.; Swerts, J.; Delabie, A.; Van Elshocht, S.;

Gatestacks for scalable high-performance FinFETs

2007 / IEEE / 978-1-4244-1507-6
By: Vellianitis, G.; van Dal, M.J.H.; Lander, R.J.R.; Jurczak, M.; Biesemans, S.; Donnet, D.; Roberts, H.; Voogt, F.; Weemaes, R.G.; Kaiser, M.; Rooyackers, R.; Hikavyy, A.; Leys, F.; Delvaux, C.; Vandeweyer, T.; Delabie, A.; Mertens, S.; Beckx, S.; Demand, M.; Duffy, R.; Pawlak, B.J.; Petty, J.; Lai, L.-S.; Torregiani, C.; Jonville, C.; Collaert, N.; Doornbos, G.; Curatola, G.; Witters, L.;

Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications

2007 / IEEE / 978-1-4244-1123-8
By: Shou-Zen Chang; HongYu Yu; Biesemans, S.; Hoffmann, T.; Absil, P.; Brus, S.; Veloso, A.; Vrancken, C.; Kerner, C.; Singanamalla, R.; Everaert, J.-L.; Delabie, A.; Lauwers, A.;

Mass Metrology for controlling and understanding processes

2007 / IEEE / 978-1-4244-1141-2
By: Cunnane, L.; Vanhaelemeersch, S.; Xiaoping Shi; Delabie, A.; Kiermansz, A.; Redolfi, A.; Vecchio, G.; Kunnen, E.; Everaert, J.-L.;

Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High- $\kapp

2008 / IEEE
By: Wang, X.P.; Van Elshocht, S.; Delabie, A.; Adelmann, C.; Yu, H.Y.; Chang, S.Z.; Biesemans, S.; Hoffmann, T.Y.; Absil, P.; Kerner, C.; Aoulaiche, M.; Swerts, J.; Nyns, L.; Akheyar, A.;

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

2008 / IEEE
By: Absil, P.; Schram, T.; Biesemans, S.; Ragnarsson, L.-A.; Van Elshocht, S.; Adelmann, C.; Delabie, A.; Hantschel, T.; Conard, T.; Jakschik, S.; Akheyar, A.; Chang, V.S.; Hong Yu Yu; Hag Ju Cho;

Novel process to pattern selectively dual dielectric capping layers using soft-mask only

2008 / IEEE / 978-1-4244-1802-2
By: Schram, T.; Kubicek, S.; Biesemans, S.; Absil, P.P.; Hoffmann, T.; Lauwers, A.; De Meyer, K.; Kauerauf, T.; Moon-Ju Cho; Aoulaiche, M.; Chiarella, T.; Kerner, C.; Ragnarsson, L.-A.; Witters, T.; Adelmann, C.; Delabie, A.; Kelkar, P.; Ercken, M.; Sebai, F.; Vos, R.; Paraschiv, V.; Hooker, J.C.; Cho, H.-J.; Akheyar, A.; Okuno, Y.; Mitsuhashi, R.; Chang, V.S.; Chang, S.-Z.; Vrancken, C.; Brus, S.; Rohr, E.;

Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay

2008 / IEEE / 978-1-4244-1802-2
By: Kubicek, S.; Hoffmann, T.; Rohr, E.; Paraschiv, V.; Vos, R.; Demand, M.; Adelmann, C.; Witters, T.; Nyns, L.; Delabie, A.; Ragnarsson, L.-A.; Chiarella, T.; Kerner, C.; Mercha, A.; Parvais, B.; Aoulaiche, M.; Ortolland, C.; Yu, H.; Veloso, A.; Witters, L.; Singanamalla, R.; Kauerauf, T.; Brus, S.; Vrancken, C.; Chang, V.S.; Chang, S.-Z.; Mitsuhashi, R.; Okuno, Y.; Akheyar, A.; Cho, H.-J.; Hooker, J.; O'Sullivan, B.J.; Van Elshocht, S.; De Meyer, K.; Jurczak, M.; Absil, P.; Biesemans, S.; Schram, T.;

Ge and III/V devices for advanced CMOS

2009 / IEEE / 978-1-4244-3704-7
By: Brammertz, G.; Mittard, J.; Adelmann, C.; Heyns, M.; Wei-E Wang; Sioncke, S.; Simoen, E.; Scarrozza, M.; Pourtois, G.; Penaud, J.; Brunco, D.; Meuris, M.; Merckling, C.; Martens, K.; Lin, D.; Houssa, M.; Eneman, G.; Delabie, A.; De Jaeger, B.; Caymax, M.;

Alternative channel materials for MOS devices

2008 / IEEE / 978-1-4244-2071-1
By: Heyns, M.; Adelmann, C.; Wei-E Wang; Sioncke, S.; Simoen, E.; Scarrozza, M.; Pourtois, G.; Penaud, J.; Mittard, J.; Meuris, M.; Merckling, C.; Martens, K.; Lin, D.; Houssa, M.; Eneman, G.; Delabie, A.; De Jaeger, B.; Caymax, M.; Brunco, D.; Brammertz, G.;

Germanium for advanced CMOS anno 2009: a SWOT analysis

2009 / IEEE / 978-1-4244-5641-3
By: Bellenger, F.; Hellings, G.; Eneman, G.; Caymax, M.; Heyns, M.; Meuris, M.; De Meyer, K.; Merckling, C.; De Jaeger, B.; Mitard, J.; Simoen, E.; Loo, R.; Wang, G.; Delabie, A.;

Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

2009 / IEEE / 978-1-4244-5641-3
By: Delabie, A.; Martens, K.; Fleischmann, C.; Sioncke, S.; Brammertz, G.; Lin, D.; Hoffmann, T.; Heyns, M.; Meuris, M.; Caymax, M.; Mitard, J.; Vatomme, A.; Temst, K.; Wang, W.E.; Lin, J.C.; Tseng, W.H.; Conard, T.; Bender, H.;

Fundamental study of atomic layer deposition in and on porous low-k films

2011 / IEEE / 978-1-4577-0502-1
By: Baklanov, M.R.; Farrell, L.; Verdonck, P.; Swerts, J.; Delabie, A.; Tielens, H.; Van Elshocht, S.; Nyns, L.; Witters, J.; Van Besien, E.;

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