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Author: Colombo, L.

Results

The effect of field effect device channel dimensions on the effective mobility of graphene
2011 / IEEE / 978-1-61284-244-8
By: Venugopal, A.; Vogel, E.M.; Colombo, L.; Kirk, W.P.; Chan, J.;
Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs
2012 / IEEE / 978-1-4673-1164-9
By: Basu, D.; Kim, S.; Register, L.F.; Reddy, D.; Tutuc, E.; Corbet, C.; Banerjee, S.K.; MacDonald, A.H.; Carpenter, G.; Colombo, L.;
Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET
2015 / IEEE
By: Kang, S.; Fallahazad, B.; Banerjee, S.K.; Tutuc, E.; Register, L.F.; Colombo, L.; Watanabe, K.; Taniguchi, T.; Corbet, C.M.; Kim, K.; Movva, H.; Lee, K.;
Dynamic and long-time tests of the transverse piezoelectric coefficient in PZT thin films
2014 / IEEE
By: Mazzalai, A.; Colombo, L.; Muralt, P.; Chidambaram, N.; Balma, D.;
Niobium doped lead zirconate titanate thin films grown by chemical solution deposition
2013 / IEEE
By: Sandu, C.; Mazzalai, A.; Chidambaram, N.; Fusi, M.; Colombo, L.; Faralli, D.; Muralt, P.; Balma, D.;
Dynamic and long-time tests of the transverse piezoelectric coefficient in PZT thin films
2014 / IEEE
By: Muralt, P.; Chidambaram, N.; Balma, D.; Mazzalai, A.; Colombo, L.;
Tight binding molecular dynamics
1994 / IEEE / 0-8186-6605-6
By: Colombo, L.; Goedecker, S.;
A novel BST storage capacitor node technology using platinum electrodes for Gbit DRAMs
1997 / IEEE / 0-7803-4100-7
By: Kressley, M.A.; Visokay, M.R.; Colombo, L.; Summerfelt, S.; Crenshaw, D.L.; Hurd, T.Q.; Gaynor, J.F.; Khamankar, R.B.; Wilson, A.M.; Fang, S.J.; Okumo, Y.; Nemoto, S.; Xing, G.; Moise, T.;
Electrical properties of submicron (/spl ges/0.13 /spl mu/m/sup 2/) Ir/PZT/Ir capacitors formed on W plugs
1999 / IEEE / 0-7803-5410-9
By: Johnston, S.T.; Vestyck, D.J.; Hsu, T.; Wills, L.A.; Kavari, R.; Ma, S.; Amano, J.; Loke, A.; Gilbert, S.R.; Sakoda, T.; Colombo, L.; Xing, G.; Summerfelt, S.R.; Moise, T.S.; Bilodeau, S.M.; Russell, M.W.;
Interaction between respiration and beat-by-beat ventricular parameters from acoustic quantification
2000 / IEEE / 0-7803-6557-7
By: Baselli, G.; Porta, A.; Gandini, A.; Colombo, L.; Cerutti, S.; Turiel, M.; Muzzupappa, S.; Caiani, E.G.;
Advanced CMOS transistors with a novel HfSiON gate dielectric
2002 / IEEE / 0-7803-7312-X
By: Bevan, M.J.; Grider, T.; Douglas, M.; Tsung, L.; Laaksonen, R.T.; Bu, H.; Khamankar, R.; Shanware, A.; Chambers, J.J.; Visokay, M.R.; Rotondaro, A.L.P.; Colombo, L.; Kuan, R.; McPherson, J.;
Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain
2002 / IEEE
By: Colombo, L.; Chambers, J.J.; Shanware, V.A.; Visokay, M.R.; Rotondaro, A.L.P.;
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
2003 / IEEE / 0-7803-7649-8
By: Visokay, M.R.; Shanware, A.; Nicollian, P.E.; Colombo, L.; McPherson, J.; Chambers, J.J.; Aur, S.; Khamankar, R.; Bevan, M.J.; Bu, H.; Rotondaro, A.L.P.;
Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/
2005 / IEEE
By: Colombo, L.; Wong, G.M.T.; Ching-Huang Lu; Nishi, Y.; Clemens, B.M.; Deal, M.D.; Chambers, J.J.; Visokay, M.R.; Chi On Chui; Majhi, P.; Tsai, W.;
The influence of microstructure on the impedance characteristics of (Hg,Cd)Te MIS devices
1982 / IEEE
By: Colombo, L.; Syllaios, A.J.;
Diffusion limited dark current in n-type (Hg,Cd)Te MIS devices
1983 / IEEE
By: Syllaios, A.J.; Colombo, L.;
45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process
2005 / IEEE / 0-7803-9268-X
By: Visokay, R.; Vitale, S.; Ramin, M.; Pas, M.; Shanware, A.; Bu, H.; Mehrad, F.; Lu, J.-P.; Yu, S.; McKee, B.; Johnson, S.; Colombo, L.; Kraft, R.; Blatchford, J.; Machala, S.; Bushman, S.; Chapman, R.; Tran, J.; Hong, H.; Bowen, C.; Obeng, Y.; Montgomery, C.; Hall, L.; Jiang, P.; Yang, S.-H.;
Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs
2006 / IEEE
By: Shanware, A.; Yang Liu; Dutton, R.; Colombo, L.;
Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs
2006 / IEEE
By: Chambers, J.J.; Green, K.; Shanware, A.; Colombo, L.; Visokay, M.R.; Celik-Butler, Z.; Devireddy, S.P.; Bigang Min; Rotondaro, A.L.P.;
A new model for 1/f noise in high-� MOSFETs
2007 / IEEE / 978-1-4244-1507-6
By: Hsing-Huang Tseng; Celik-Butler, Z.; Colombo, L.; Rahman, M.S.; Devireddy, S.P.; Morshed, T.; Zlotnicka, A.; Quevedo-Lopez, M.A.; Visokay, M.R.; Chambers, J.J.; Green, K.; Shanware, A.;
Quality of provisioning as an OPEX-related issue in research networks
2008 / IEEE / 978-1-4244-1844-2
By: Colombo, L.; Maier, G.; Szegedi, P.; Pattavina, A.; Costantino, D.G.;
A Model of BGA Thermal Vias as an Example of Lumped Parameter Analysis in Thermal Modeling of SiPs and Stacked Die Packages
2009 / IEEE
By: Colombo, L.; Paleari, D.; Petrushin, A.;
Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs
2009 / IEEE
By: Celik-Butler, Z.; Morshed, T.H.; Rahman, M.S.; Colombo, L.; Shanware, A.; Quevedo-Lopez, M.A.;
Fullerene-Based Hybrid Devices for High-Density Nonvolatile Memory
2011 / IEEE
By: Ferdousi, F.; Banerjee, S.K.; Colombo, L.; Ferrer, D.; Kaur, S.; Liu, H.; Jamil, M.;

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