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Author: Chakravarti, A.

Results

Mathematical modelling and simulation of directly coupled PV water pumping system employing Switched Reluctance Motor
2011 / IEEE / 978-1-4673-0315-6
By: Chakravarti, A.; Belliwali, S.; Raju, A.B.;
Nonlinear reflection and transmission of electromagnetic waves by moving plasmas
1971 / IEEE
By: Chakravarti, A.;
Distortion of electromagnetic pulses undergoing total internal reflection from a moving dielectric half-space
1973 / IEEE
By: Gautama, G.; Chakravarti, A.; Rattan, I.;
Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D
2002 / IEEE / 0-7803-7462-2
By: Lee, B.H.; Mocuta, A.; Welser, J.; Haensch, W.; Agnello, P.; Leobandung, E.; Yang, I.Y.; Ieong, M.; Ku, S.H.; Narasimha, S.; Jenkins, K.A.; Domenicucci, A.; Gribelyuk, M.; Kermel, H.; Sendelbach, M.; Jamin, F.; Mezzapelle, J.; Mitchell, R.M.; Chakravarti, A.; Mocuta, D.; Lavoie, C.; Cabral, C.; Chan, K.; Mo, R.; O'Neil, P.; Rim, K.; Sadana, D.; Bedell, S.; Chen, H.;
Thermally robust dual-work function ALD-MN/sub x/ MOSFETs using conventional CMOS process flow
2004 / IEEE / 0-7803-8289-7
By: Park, D.-G.; Luo, Z.J.; Wann, C.H.; Sekiguchi, A.; Ng, H.; Rengarajan, R.; Jammy, R.; Wise, R.; Steegen, A.; Narayanan, V.; D'Emic, C.; Kozlowski, P.; Duch, E.; Kim, H.; Ku, V.; Mitchell, R.; Chakravarti, A.; Ronsheim, P.; Gluschenkov, O.; Bruley, J.; Chudzik, M.; Chou, A.; Lee, B.H.; Jamison, P.; Edleman, N.; Zhu, W.; Nguyen, P.; Wong, K.; Cabral, C.;
Application-specific scheduling for the organic grid
2004 / IEEE / 0-7803-8694-9
By: Baumgartner, G.; Chakravarti, A.; Lauria, M.;
Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy
2007 / IEEE / 978-4-900784-03-1
By: Chan, K.; Lavoie, C.; Dyer, T.; Byeong Kim; Chakravarti, A.; Ozcan, A.; Madan, A.; Jinghong Li; Gluschenkov, O.; Yaocheng Liu; Ken Rim; Henson, W.; Loesing, R.; Zhijiong Luo; Rovedo, N.; Pinto, T.; Popova, I.;
On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs
2008 / IEEE / 978-1-4244-1802-2
By: Sadana, D.; Park, D.-G.; Lauer, I.; Pal, R.; Kanarsky, T.; Chakravarti, A.; Harley, E.; Yang, B.; Weijtmans, J.W.; Black, L.; Dube, A.; Miller, J.; Adam, T.; Pinto, T.; Madan, A.; Zhu, Z.; Xia, G.; Chan, K.; Takalkar, R.; Yang, B.F.; Li, J.; Pei, G.; Zhibin Ren;
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
2008 / IEEE / 978-1-4244-2377-4
By: Yang, B.; Takalkar, R.; Leobandung, E.; Pellerin, J.; Luning, S.; Maciejewski, E.; Schepis, D.; Mocuta, D.; Park, D.-G.; Sadana, D.; Grudowski, P.; Zollner, S.; Theodore, D.; Holt, J.; Meer, H.; Sun, S.; Aime, D.; Ren, Z.; Black, L.; Dube, A.; Weijtmans, J.W.; Li, J.; Johnson, J.B.; Faltermeier, J.; Madan, A.; Zhu, Z.; Turansky, A.; Xia, G.; Chakravarti, A.; Pal, R.; Chan, K.; Reznicek, A.; Adam, T.N.; Yang, B.; de Souza, J.P.; Harley, E.C.T.; Greene, B.; Gehring, A.; Cai, M.;
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
2010 / IEEE / 978-1-4244-9129-2
By: Gupta, S.; Krishnan, R.; Goyal, P.; Stiffler, S.; Chudzik, M.; Parries, P.; Venigalla, R.; Arndt, R.; Knarr, R.; Khan, B.; Li, X.; Allen, S.; Morgenfeld, B.; McStay, K.; Shepard, J.; Domenicucci, A.; Chakravarti, A.; Dadson, J.; Takalkar, R.; Liu, J.; Li, Z.; Lee, S.; Fang, S.; Deshpande, S.; Arya, A.; Tessier, A.; Ho, H.; Davies, W.;

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